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首页> 外文会议>International workshop on nondestructive testing and computer simulations in science and engineering >Theoretical and experimental studies of (AlN)1-x(SIC)x layer structures formed by N+ and Al+ coimplantation in 6H-SiC
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Theoretical and experimental studies of (AlN)1-x(SIC)x layer structures formed by N+ and Al+ coimplantation in 6H-SiC

机译：N +和Al +共注入6H-SiC中形成的（AlN）1-x（SIC）x层结构的理论和实验研究

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Abstract: The (SiC)$-1-x$/(AlN)$-x$/ binary system is widely investigated now. In reference 1 the possibility of using of ion implantation (Al$+$PLU$/ and N$+$PLU$/) in 6H-SiC under high temperatures to create (SiC)$-1-x$/(AlN)$-x$/ is first reported. The samples having been heated to 200 degrees Celsius, 400 degrees Celsius, 600 degrees Celsius and 800 degrees Celsius have been irradiated by ions, and after it the RBS-profiles of generated defects have been obtained. Then the samples have been annealed at 1200 degrees Celsius and RBS- spectra have been obtained again. The main results obtained in reference 1 and 2 are presented. In reference 2 - 4 we suggested the model of defect structure evolution in silicon carbide under ion irradiation. The aim of this work is to develop this model taking into account internal stress field. !4
机译：摘要：（SiC）$-1-x $ /（AlN）$-x $ /二元系统已被广泛研究。在参考文献1中，在高温下在6H-SiC中使用离子注入（Al $ + $ PLU $ /和N $ + $ PLU $ /）产生（SiC）$-1-x $ /（AlN）$的可能性-x $ /首先被报告。已经用离子辐照已经加热到200摄氏度，400摄氏度，600摄氏度和800摄氏度的样品，然后获得生成缺陷的RBS轮廓。然后将样品在1200摄氏度下退火，并再次获得RBS光谱。介绍了参考文献1和2中获得的主要结果。在参考文献2-4中，我们提出了离子辐照下碳化硅中缺陷结构演变的模型。这项工作的目的是在考虑内部应力场的情况下开发该模型。 ！4

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