(AlN) (SiC)1-x (AlN)x by sublimation method. SUBSTANCE: method for production of epitaxial layers of solid solutions (SiC) (SiC)4-x(AlN)x (AlN) (SiC)1-x (AlN)x consists in that sublimation is conducted from the source in form of polycrystalline sinter SiC+AlN with the following amounts of components mas.%:SiC 20-80; the balance AlN. Method provides perfect layers of preset composition within the interval x=0.35-0.9. EFFECT: lower costs of the process. 1 dwg"/>
公开/公告号SU1297523A1
专利类型
公开/公告日1996-10-10
原文格式PDF
申请/专利号SU19853845275
申请日1985-01-17
分类号C30B23/02;
国家 SU
入库时间 2022-08-22 03:43:45