This paper shows how switched current circuits take advantage of technological advances. The tendency is towards lower grid length and lower threshold voltage. The first developed point show consequences on static performances : with lower threshold voltage, power supply decreases but input signal swing also decreases; with lower grid length, the occupied die area falls. The second point concerns SI circuits accuracy. With the significant fall of the minimum size of a transistor, an interesting evolution occurs. The charge injection problem has proven to be serious in switched-current systems. But, with recent technologies, we can show that the error due to charge injection is lower than thermal noise contribution. In future, it isn't worth to use sophisticated architectures to obtain good accuracy. Thus, SI circuits gain in simplicity and robustness. The last point offers a comparison of figure-of-merit reachable with 0.8 /spl mu/m, 0.6 /spl mu/m and 0.35 /spl mu/m CMOS standard processes.
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机译：本文展示了开关电流电路如何利用技术进步。趋向于降低栅极长度和降低阈值电压。第一个发展点表明了对静态性能的影响：阈值电压降低时，电源减少，但输入信号摆幅也减少;网格长度越短，所占的模具面积就越小。第二点涉及SI电路的精度。随着晶体管最小尺寸的显着下降，发生了有趣的变化。事实证明，在开关电流系统中，电荷注入问题非常严重。但是，利用最新技术，我们可以证明由于电荷注入引起的误差低于热噪声贡献。将来，不值得使用复杂的体系结构来获得良好的准确性。因此，SI电路获得简单性和鲁棒性。最后一点提供了CMOS标准工艺在0.8 / spl mu / m，0.6 / spl mu / m和0.35 / spl mu / m可获得的品质因数的比较。
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