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首页> 外文会议>International Conference on Wireless and Optical Communications, 2005. 14th Annual WOCC 2005 >Strategies for improving the efficiency of Cz-silicon solar cells
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Strategies for improving the efficiency of Cz-silicon solar cells

机译：提高Cz-硅太阳能电池效率的策略

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摘要

Recent investigations have firmly established that the metastabledefect which is responsible for the light-induced degradation inCzochralski silicon (Cz-Si) is correlated with oxygen and boron. Thus,an attractive way to improve the material quality is to substitute boronby gallium as the p-type dopant. The authors have verified that nodegradation and excellent carrier lifetimes close to the theoreticallimit are observed over a wide doping concentration range. Stableefficiencies higher than 20% can be achieved with an RP-PERC cellstructure on gallium-doped Cz-Si with resistivities from 0.12 Ω cmto 1.5 Ω cm. A maximum efficiency of 22.2% was obtained at 0.3Ω cm despite the Ga-doped Cz-Si having a significant concentrationof interstitial oxygen. Standard Cz-Si (boron-doped,oxygen-contaminated) can be improved by an optimized high-temperaturestep without external gettering. Choosing the optimal processparameters, it is possible to increase the stable lifetime significantlyin both conventional tube furnace and rapid thermal processing (RTP)system. Using the RTP system, the stable lifetime can be improved by afactor of two within 120 s
机译：最近的调查确立了亚稳定性 负责光引起的降解的缺陷 Czochralski硅（CZ-Si）与氧气和硼相关。因此， 一种提高材料质量的有吸引力的方法是替代硼 镓作为p型掺杂剂。作者已经证实了没有 靠近理论的劣化和优异的载体寿命 在宽掺杂浓度范围内观察到极限。稳定的 通过RP-PERC细胞可以实现高于20％的效率 镓掺杂CZ-Si上的结构，电阻为0.12Ωcm 到1.5Ωcm。最大效率为22.2％，在0.3时获得 尽管Ga-掺杂的CZ-Si具有显着浓度，但ωcm 间质氧气。标准CZ-Si（硼掺杂， 通过优化的高温可以提高氧气污染物 没有外部吸气的步骤。选择最佳过程 参数，可以显着增加稳定的寿命 在传统的管炉和快速热处理（RTP）中 系统。使用RTP系统，可以通过稳定的寿命得到改善 超过120秒内的因子

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