首页> 外文会议>Conference on Photomask Technology; 20060919-22; Monterey,CA(US) >Study of Chrome-less Mask Quartz Defect Detection Capability for 80nm Post Structure
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Study of Chrome-less Mask Quartz Defect Detection Capability for 80nm Post Structure

机译:80nm柱结构无铬掩模石英缺陷检测能力的研究

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Chrome-less Phase Lithography (CPL) was introduced as a potential strong Resolution Enhancement Technology (RET) for 90nm to 65nm node critical layers. One of the important issue with trench type chrome-less mask manufacturing for post structure is quartz defect detection capability. This study will focus on half pitch 80nm (1X) design node and apply different trench sizes and programmed defect sizes. All test patterns will be inspected on KLA-Tencor TeraScan576 inspection tool with both standard Die-to-Die (DD) and TeraPhase DD inspection modes to determine defect detection capability. All programmed defects will also be simulated on the Zeiss AIMS Fab-193 to determine wafer CD error. Finally, we will establish the relationship between trench size, defect detection capability and printability, and summarize the chrome-less mask quartz defect detection capability for 80nm post structure application.
机译:无铬相位光刻(CPL)作为一种潜在的强大的分辨率增强技术(RET)被引入,适用于90nm至65nm的节点关键层。用于柱结构的沟槽型无铬掩模制造的重要问题之一是石英缺陷检测能力。这项研究将集中在半节距80nm(1X)设计节点上,并应用不同的沟槽尺寸和编程的缺陷尺寸。所有测试图案都将在KLA-Tencor TeraScan576检查工具上进行检查,并采用标准管芯对晶片(DD)和TeraPhase DD检查模式,以确定缺陷检测能力。所有编程的缺陷也将在Zeiss AIMS Fab-193上进行仿真,以确定晶圆CD的错误。最后,我们将建立沟槽尺寸,缺陷检测能力和可印刷性之间的关系,并总结用于80nm后结构应用的无铬掩模石英缺陷检测能力。

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