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首页> 外文会议>Conference on Photomask Technology; 20060919-22; Monterey,CA(US) >Deep sub-wavelength mask assist features and mask errors printability in high NA lithography
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Deep sub-wavelength mask assist features and mask errors printability in high NA lithography

机译：高NA光刻中的深亚波长掩模辅助功能和掩模错误可印刷性

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As silicon processes scale toward the 45 nm node using conventional 0.25 magnification, widths of sub-resolution assist feature (SRAF) and printable defects on photomasks drop far below the ArF laser wavelength. Adoption of polarized illumination and higher numerical aperture (NA) could invalidate the scaling relations we used in the past to determine which small mask features or errors will print on wafers. Polarization interaction with small mask features may also plays a role in mask inspection. As mask features shrink below the wavelength, differences between the optical systems used for inspection and printing become more significant, and may affect the rules for disposition of inspection results. The data presented here combines experimental results from high NA imaging of sub-wavelength SRAF and defects, with rigorous calculation of their images based on vector diffraction. The printability of these deep subwavelength mask feature determines the requirements of optical model's rigorousness for SRAF design rule and also mask defect inspection & repair capabilities.
机译：随着硅工艺使用传统的0.25放大倍数朝着45 nm节点扩展，亚分辨率辅助部件（SRAF）的宽度和光掩模上的可印刷缺陷下降到远低于ArF激光波长。采用偏光照明和更高的数值孔径（NA）可能会使我们过去用来确定哪些较小的掩模特征或错误将在晶圆上印刷的比例关系无效。带有小光罩特征的极化相互作用也可能在光罩检查中发挥作用。当掩模特征收缩到波长以下时，用于检查和打印的光学系统之间的差异会变得更加明显，并且可能会影响检查结果的处理规则。本文提供的数据结合了来自亚波长SRAF和缺陷的高NA成像的实验结果，以及基于矢量衍射的严格图像计算。这些深亚波长掩膜功能的可印刷性决定了光学模型对SRAF设计规则的严格要求以及掩膜缺陷检查和修复能力。

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