• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Conference on Photomask Technology; 20060919-22; Monterey,CA(US) >The specification of the 45 nm node Photomask repair process
【24h】

The specification of the 45 nm node Photomask repair process

机译：45 nm节点光掩模修复工艺规范

获取原文
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The shrink of device node to 65 and 45nm node masks mask manufacturers paying their attention to repair process in terms of mask cost efficiency. Thus, it is very important to define the repair performance accurately and introduce adequate tools timely. Usually the repair performance has been expressed as an edge placement error, transmittance change and quartz damage. We have used the measuring tools such as CD SEM, AFM and AIMS to measure those factors and the 2D simulator, Solid C to predict the repair performance. In this case, 3D topographical effect is not considered. However, the 3D topography of pattern becomes quite important for 45 nm node or less. ArF immersion lithography is the strongest candidate for the 45 nm node. The immersion technology makes it possible to use of hyper NA systems. Hyper NA will increase the polarization effect of illumination source. Therefore, the topography of pattern is quite important with respect to the intensity and the polarization of various diffraction orders. This paper presents repair specifications based on the Solid E 3D simulator of the 45 nm node.
机译：器件节点的缩小到65和45nm节点掩模掩模制造商在掩码成本效率方面提请注意修复过程。因此，准确地定义修复性能并及时引入足够的工具非常重要。通常，修复性能已表示为边缘放置误差，透射率变化和石英损坏。我们使用了CD SEM，AFM等测量工具，旨在测量这些因素和2D模拟器，固体C预测修复性能。在这种情况下，不考虑3D地形效果。但是，图案的3D地形变得非常重要，对于45nm节点或更少。 ARF浸入光刻是45nm节点最强的候选者。浸没技术使得可以使用超基系统。 HyperNA将增加照明源的偏振效果。因此，对于各种衍射令的强度和极化，图案的形貌非常重要。本文介绍了基于45 nm节点的实体e 3D模拟器的修复规范。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号