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首页> 外文会议>International Conference on Lasers, Applications, Technologies >High-efficient discharge-pumped ArF (193 nm) excimer laser with a TPI thyratron as a high-voltage switch
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High-efficient discharge-pumped ArF (193 nm) excimer laser with a TPI thyratron as a high-voltage switch

机译：带有TPI晶闸管作为高压开关的高效放电泵浦ArF（193 nm）准分子激光器

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The results of using the thyratron of the TPI series (pseudo spark gap) as a high-voltage switch in the excitation system of ArF (193 nm) excimer laser are presented. The excitation system of the LC-inverter type based on TPI 10k/20 thyratron in absence of any non-linear elements was developed. An experimental investigation of the energy and temporal parameters of the pumping and lasing for ArF laser on the He:Ar:F_2 mixture with excitation system developed was carried out. The comparative analysis of the ArF laser pumping and radiation parameters in dependence of the high-voltage switch type such as a standard spark gap RU-65, and thyratron TPI 10k/20 was performed. The output radiation energy for a laser with thyratron TPI 10k/20 was obtained to be of 1.4 times higher than that with standard spark gap RU-65 at the same pumping conditions. Such increase the output energy was shown to be achieving owing to higher level of the pumping intensity due to higher voltage on the discharge gap that occurs due to lower energy losses into TPI thyratron in comparison with the RU-65 spark gap and leads to more efficient energy transfer from storage to discharge circuit. As a result for ArF laser with TPI thyratron in He:Ar:F_2 mixture the output radiation energy of 1.0 J with the total efficiency of 1.7% has been achieved. The advantages of using the TPI thyratron in the excitation system of the ArF excimer laser over spark gap are described.
机译：给出了在ArF（193 nm）准分子激光器的激发系统中使用TPI系列晶闸管（伪火花隙）作为高压开关的结果。开发了基于TPI 10k / 20晶闸管的LC逆变器型励磁系统，该励磁系统不存在任何非线性元件。利用研制的激发系统对He：Ar：F_2混合气中ArF激光泵浦和激射的能量和时间参数进行了实验研究。根据高压开关类型（例如标准火花隙RU-65和thyratron TPI 10k / 20）对ArF激光泵浦和辐射参数进行了比较分析。在相同的泵浦条件下，晶闸管TPI为10k / 20的激光器的输出辐射能量是标准火花隙RU-65的1.4倍。由于与RU-65火花隙相比，由于进入TPI晶闸管的能量损耗较低而导致的放电间隙上的较高电压导致更高的泵浦强度水平，因此显示出这种输出能量的增加是可以实现的能量从存储转移到放电电路。通过在He：Ar：F_2混合物中使用TPI晶闸管的ArF激光器实现了1.0 J的输出辐射能和1.7％的总效率。描述了在ArF准分子激光器的激发系统中在火花隙上使用TPI晶闸管的优势。

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