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Temperature Dependence of Leakage Current in Segmented a-Si:H n-i-p Photodiodes

机译：分段a-Si：H n-i-p光电二极管中漏电流的温度依赖性

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Hydrogenated amorphous silicon (a-Si:H) n-i-p photodiodes may be used as the pixel sensor element in large-area array imagers for medical diagnostics applications. The dark current level is an important parameter that dictates the performances of these types of pixelated imaging devices. Through measurements performed at different ambient temperatures, the leakage current components of segmented a-Si:H n-i-p photodiodes were extracted and analyzed. It was found that the central component of the reverse current depends exponentially on bias and temperature. The activation energy of this component is independent of bias. The peripheral component of reverse current exhibits linear bias dependence at temperatures up to 50°C, while the contribution of this component diminishes at high temperatures. The dependence of dark current components on bias and temperature could be described by compact analytical equations. The model of forward and reverse dark current characteristics in temperature range was implemented in Verilog-A hardware description language.
机译：氢化非晶硅（a-Si：H）n-i-p光电二极管可用作医学诊断应用的大面积阵列成像仪中的像素传感器元件。暗电流水平是决定这些类型的像素化成像设备的性能的重要参数。通过在不同的环境温度下进行测量，可以提取并分析分段的a-Si：H n-i-p光电二极管的泄漏电流分量。发现反向电流的中心分量成指数地取决于偏置和温度。该成分的活化能与偏压无关。反向电流的外围分量在高达50°C的温度下表现出线性偏置依赖性，而在高温下，该分量的贡献减小。暗电流分量对偏置和温度的依赖性可以通过紧凑的分析方程式来描述。用Verilog-A硬件描述语言实现了温度范围内的正向和反向暗电流特性模型。

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