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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Low leakage current a-Si : H/a-SiC : H n-i-p photodiode with Cr/a-SiNx front contact
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Low leakage current a-Si : H/a-SiC : H n-i-p photodiode with Cr/a-SiNx front contact

机译：低泄漏电流a-Si：H / a-SiC：H n-i-p光电二极管，带Cr / a-SiNx前触点

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摘要

This paper presents the design and fabrication process of an a-Si:H/a-SiC:H heterojunction n-i-p photodiode developed for low-level light detection applications. The critical fabrication issues associated with deposition of device-quality materials, tailoring of defects at the i-p interface, film patterning, junction passivation, and contact formation are discussed. A significant reduction of the leakage current down to similar to 10 pA/cm(2) at reverse bias of I V has been achieved by the introduction of similar to 2 nm graded and similar to 4 nm a-SiC:H buffer layers between the i- and p-layers. To preserve interface integrity, a semi-transparent Cr film with a-SiNx anti-reflection coating is used as a front contact. It is found that such contact induces lower leakage than transparent conductive oxide (TCO) contacts, which can cause a degradation of the p-i interface. A drawback of the semi-transparent metal contact is the optical loss, which can be minimized by thinning the metal layer and optimizing the anti-reflection coating. Quantum efficiency up to 52% is achieved for the optimized photodiode. (c) 2006 Elsevier B.V. All rights reserved.
机译：本文介绍了专为低水平光检测应用开发的a-Si：H / a-SiC：H异质结n-i-p光电二极管的设计和制造过程。讨论了与器件质量材料的沉积，i-p界面处的缺陷定制，膜构图，结钝化和接触形成有关的关键制造问题。在IV的反向偏压下，通过在i层之间引入相似的2 nm梯度层和相似的4 nm a-SiC：H缓冲层，可以将泄漏电流显着降低至近似10 pA / cm（2）。 -和p层。为了保持界面完整性，带有a-SiNx减反射涂层的半透明Cr膜用作正面触点。发现与透明导电氧化物（TCO）接触相比，这种接触引起的泄漏更低，这可以导致p-i界面的劣化。半透明金属接触的一个缺点是光学损失，可以通过减薄金属层和优化抗反射涂层来最大程度地减少光学损失。优化的光电二极管可实现高达52％的量子效率。 （c）2006 Elsevier B.V.保留所有权利。

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