Investigation of Hydrogenated Amorphous SiN_x:H Films Grown by Rapid Thermal Chemical Vapor Deposition

机译：快速热化学气相沉积生长氢化非晶SiN_x：H薄膜的研究

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Hydrogenated silicon nitride films were deposited with NH_3, SiH_4 and N_2 gas mixture at 700°C by rapid thermal chemical vapor deposition (RTCVD) system. Wafer curvature measurements were carried out at room temperature to study the SiN_x:H film stress with various deposition parameters. The NH_3/N_2 flow ratio and deposition pressure are found to influence the film stress. The stress of SiN.,:H films deposited by RTCVD is tensile, which can reach ～ 1.5 GPa in our study. The influence of the reactive gas mixture and working pressure on the film stress, in connection with its material properties, is demonstrated.

机译：通过快速热化学气相沉积（RTCVD）系统在700°C下用NH_3，SiH_4和N_2气体混合物沉积氢化的氮化硅膜。在室温下进行晶片曲率测量，以研究具有各种沉积参数的SiN_x：H薄膜应力。发现NH_3 / N_2流量比和沉积压力会影响薄膜应力。 RTCVD沉积的SiN.::H薄膜的应力是拉伸的，在我们的研究中可以达到〜1.5 GPa。结合其材料性能，证明了反应气体混合物和工作压力对薄膜应力的影响。

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《International symposium on silicon nitride, silicon dioxide, and emerging dielectrics;Meeting of the Electrochemical Society》|2009年|467-477|共11页
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Yi-Sheng Lai; S. W. Yung;
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中图分类材料;化学电源、电池、燃料电池;
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Investigation of Hydrogenated Amorphous SiN_x:H Films Grown by Rapid Thermal Chemical Vapor Deposition

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