A multi-megarad, radiation hardened by design 512 kbit SRAM in CMOS technology

机译：通过CMOS技术设计的512 kbit SRAM使辐射强度达到数兆弧度

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This paper describes a SRAM designed for space and nuclear physics applications. The device has been designed in a commercial 180 nm CMOS technology using RHBD techniques. Measurement on prototype samples under radiation demonstrate immunity to total dose and latch-up, and an adequate level of hardness with respect to single event effects.

机译：本文介绍了为空间和核物理应用设计的SRAM。该器件已采用RHBD技术以商用180 nm CMOS技术进行设计。在辐射下对原型样品进行的测量显示出对总剂量和闩锁的免疫力，并且对于单事件效应具有足够的硬度水平。

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《2010 International Conference on Microelectronics》|2010年|p.375-378|共4页
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1. Alpha-Induced Multiple Cell Upsets in Standard and Radiation Hardened SRAMs Manufactured in a 65 nm CMOS Technology [J] . Gasiot G., Giot D., Roche P. IEEE Transactions on Nuclear Science . 2006,第期

机译：采用65 nm CMOS技术制造的标准和辐射硬化SRAM中的Alpha诱导的多个单元异常
2. Novel Radiation-Hardened-by-Design (RHBD) 12T Memory Cell for Aerospace Applications in Nanoscale CMOS Technology [J] . Jing Guo, Lei Zhu, Wenyi Liu, Very Large Scale Integration (VLSI) Systems, IEEE Transactions on . 2017,第5期

机译：纳米级CMOS技术中用于航空航天应用的新型设计辐射增强（RHBD）12T存储单元
3. Low cost and highly reliable radiation hardened latch design in 65 nm CMOS technology [J] . Qi Chunhua, Xiao Liyi, Guo Jing, Microelectronics reliability . 2015,第6期

机译：采用65 nm CMOS技术的低成本和高度可靠的辐射硬化闩锁设计
4. A multi-megarad, radiation hardened by design 512 kbit SRAM in CMOS technology [C] . (missing) International Conference on Mechatronics . 2010

机译：多Megarad，辐射由CMOS技术设计512 Kbit SRAM硬化
5. Design and Performance Evaluation of 8T SRAM Cell Using FinFET and CMOS at 16nm Technology [D] . Mandadi, Prasanth. 2021

机译：在16NM技术中使用FinFET和CMOS的8T SRAM单元的设计与性能评估
6. A RRAM Integrated 4T SRAM with Self-Inhibit Resistive Switching Load by Pure CMOS Logic Process [O] . Meng-Yin Hsu, Chu-Feng Liao, Yi-Hong Shih, 2017

机译：采用纯CMOS逻辑工艺的具有自抑制电阻切换负载的RRAM集成4T SRAM
7. Single event multiple upset-tolerant SRAM cell designs for nano-scale CMOS technology [O] . Ramin RAJAEI, Bahar ASGARI, Mahmoud TABANDEH, 2017

机译：纳米级CMOS技术的单一事件多次易易宽容的SRAM单元设计

A multi-megarad, radiation hardened by design 512 kbit SRAM in CMOS technology

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