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首页> 外文会议>Design Automation Conference (ASP-DAC), 2010 >Minimizing leakage power in aging-bounded high-level synthesis with design time multi-Vth assignment
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Minimizing leakage power in aging-bounded high-level synthesis with design time multi-Vth assignment

机译：使用设计时间为多次V 的分配，最大限度地减少了在有时间限制的高级综合中的泄漏功率

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摘要

Aging effects (such as Negative Bias Temperature Instability (NBTI)) can cause the temporal degradation of threshold voltage of transistors, and have become major reliability concerns for deep-submicron (DSM) designs. Meanwhile, leakage power dissipation becomes dominant in total power as technology scales. While multi-threshold voltage assignment has been shown as an effective way to reduce leakage, the NBTI-degradation rates vary with different initial threshold voltage assignment, and therefore motivates the co-optimizations of leakage reduction and NBTI mitigation. This paper minimizes leakage power during high-level synthesis of circuits with bounded delay degradation (thus guaranteed lifetime), using multi-Vth resource libraries. We first propose a fast evaluation approach for NBTI-induced degradation of architectural function units, and multi-Vth resource libraries are built with degradation characterized for each function unit. We then propose an aging-bounded high-level synthesis framework, within which the degraded delays are used to guide the synthesis, and leakage power is optimized through the proposed aging-aware resource rebinding algorithm. Experimental results show that, the proposed techniques can effectively reduce the leakage power with an extra 26% leakage reduction, compared to traditional aging-unaware multi-Vth assignment approach.
机译：老化效应（例如负偏置温度不稳定性（NBTI））会导致晶体管阈值电压的时间下降，并已成为深亚微米（DSM）设计的主要可靠性问题。同时，随着技术的发展，泄漏功耗在总功耗中占主导地位。虽然已显示多阈值电压分配是减少泄漏的有效方法，但是NBTI降级速率随初始阈值电压分配的不同而变化，因此激励了泄漏减少和NBTI缓解的共同优化。本文使用多重V 资源库，在具有有限时延退化（从而保证使用寿命）的电路的高级综合过程中，将泄漏功率降至最低。我们首先提出了一种针对NBTI引起的建筑功能单元退化的快速评估方法，并建立了具有每个功能单元退化特征的Multi-V 资源库。然后，我们提出了一个具有时效性的高级综合框架，在该框架中，退化的延迟可用于指导合成，并且通过提出的时效性资源重新绑定算法来优化泄漏功率。实验结果表明，与传统的不了解老化的多V sub 分配方法相比，所提出的技术可以有效地减少26％的泄漏功率。

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