Study on the performance of nano-optoelectronics device: InGaAs/GaAs VLW-QWIP

机译：纳米光电子器件InGaAs / GaAs VLW-QWIP的性能研究

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

This work study on the performance characteristics of one kind of nano-optoelectronics device: InGaAs/GaAs very-long-wavelength quantum well infrared photodetector (VLW-QWIP). Based on a professional simulation tool Crosslight APSYS, we have determined the energy band, dark current spectra as well as those of the traditional AlGaAs/GaAs VLW-QWIPs under device operation temperature of 55 K. Larger responsivity and detectivity have been obtained from InGaAs/GaAs VLW-QWIPs due to its higher photoconductive gain and quantum efficiency, offering guidance for nano-optoelectronics device material choosing and optimization.

机译：这项工作研究了一种纳米光电子器件的性能特性：InGaAs / GaAs超长波长量子阱红外光电探测器（VLW-QWIP）。基于专业的仿真工具Crosslight APSYS，我们确定了在55 K的器件工作温度下的能带，暗电流谱以及传统AlGaAs / GaAs VLW-QWIP的能带，暗电流谱。InGaAs/ GaAs VLW-QWIPs具有更高的光导增益和量子效率，为纳米光电器件材料的选择和优化提供了指导。

著录项

来源
《Nanoelectronics Conference (INEC), 2010》|2010年|p.287-288|共2页
会议地点
作者
Xiong D.Y.; Guo F.M.; Zhang W.E.;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类微电子学、集成电路（IC）;
关键词

相似文献

外文文献
中文文献
专利

1. Impact of Gatelength on the Performance of InGaAs/InAs/InGaAs Composite Channel Dual Material Double Gate-High Electron Mobility Transistor Devices for High-Frequency Applications [J] . Nagarajan S., Korah Reeba, Kalavathy G. Maria Journal of Nanoelectronics and Optoelectronics . 2017,第12期

机译：Goatelength对高频应用的InGaAs / InAs / InGaAs复合通道双材料双栅极高电子移动性晶体管装置的影响
2. Selective undercut etching of InGaAs and InGaAsP quantum wells for improved performance of long-wavelength optoelectronic devices [J] . Pasquariello D., Bjorlin E.S., Lasaosa D., Journal of Lightwave Technology . 2006,第3期

机译：InGaAs和InGaAsP量子阱的选择性底切蚀刻，可改善长波长光电器件的性能
3. Time-resolved investigations of field screening in InGaAs/InGaAlAs and InGaAs/InGaAsP multiple quantum well devices [J] . Tutken T., Vaterlein C. IEEE Transactions on Electron Devices . 1992,第11期

机译：InGaAs / InGaAlAs和InGaAs / InGaAsP多量子阱器件中场筛选的时间分辨研究
4. Study on the performance of nano-optoelectronics device: InGaAs/GaAs VLW-QWIP [C] . Xiong D.Y., Guo F.M., Zhang W.E. Nanoelectronics Conference (INEC), 2010 . 2010

机译：纳米光电子器件InGaAs / GaAs VLW-QWIP的性能研究
5. Optoelectronic devices based on low threshold strained InGaAs/GaAs quantum well lasers grown on structured substrates [D] . Frateschi, Newton Cesario 1993

机译：基于在结构化衬底上生长的低阈值应变InGaAs / GaAs量子阱激光器的光电器件
6. Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light-Sensitive Devices [O] . Sergii Golovynskyi, Luca Seravalli, Oleksandr Datsenko, 2017

机译：变质InAs / InGaAs / GaAs量子点异质结构光电压中的双极效应：光敏器件的表征和设计解决方案
7. Growth and properties of InGaAs/FeAl/InAlAs/InP heterostructures for buried reflector/interconnect applications in InGaAs thermophotovoltaic devices [O] . S. A. Ringel, R. N. Sacks, L. Qin, 1999

机译：InGaAs / Feal / InAlas / InP异质结构的生长和性质在InGaAs Higholopholic Device中的埋地反射器/互连应用
8. Growth and properties of InGaAs/FeAl/InAlAs/InP heterostructures for buried reflector/interconnect applications in InGaAs thermophotovoltaic devices [R] . Ringel, S. A. , Sacks, R. N. , Qin, L. , 1998

机译：用于InGaas热光电器件中埋入式反射器/互连应用的InGaas / Feal / Inalas / Inp异质结构的生长和性质

Study on the performance of nano-optoelectronics device: InGaAs/GaAs VLW-QWIP

摘要

著录项

相似文献

相关主题

期刊订阅