• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>2010 International Conference on Indium Phosphide and Related Materials >Growth of large platy InGaAs crystals and fabrication of semiconductor laser diodes
【24h】

Growth of large platy InGaAs crystals and fabrication of semiconductor laser diodes

机译：大块状InGaAs晶体的生长和半导体激光二极管的制造

获取原文
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

We have succeeded in increasing size of InxGa1−xAs (x: 0.1–0.13) platy single crystals to 30 ×30 mm2 in surface area for mass production of laser diodes. Key points are to suppress convection in a melt and to keep constant temperature gradient for obtaining homogeneous crystals. Grown crystals have enough quality as substrates for 1.3 μm laser diodes. Fabricated laser diodes on these substrates were evaluated by measuring lasing characteristics at various temperatures and by measuring bit error rate for transmission through a single mode fiber up to 20 km. Lasers showed high temperature stability and error free transmission and showed the merit of ternary substrates.
机译：我们已经成功地将In x Ga 1-x As（x：0.1–0.13）板状单晶的尺寸增加到30×30 mm 2 在表面积上可大量生产激光二极管。关键是抑制熔体中的对流并保持恒定的温度梯度以获得均匀的晶体。生长的晶体作为1.3μm激光二极管的基板具有足够的质量。通过在各种温度下测量激光特性并测量通过20 km的单模光纤传输的误码率，可以评估在这些基板上制造的激光二极管。激光显示出高温稳定性和无差错传输，并显示出三元基板的优点。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号