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Chemically Sensitive Field-Effect Sensors for Polar Molecular Detection

机译：用于极性分子检测的化学敏感场效应传感器

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The chemically sensitive field-effect sensors were made with simplified silicon chip technology, and its fabrication processing flow was designed based on the metal gate CMOS technology employing only 6 pattern masks. The sensors were measured as field modulation resistors since they were made in its depletion mode. When the selected polar molecules as the analyte polymer were coated on the gate area of sensor instead of the gate metal using self-assembly techniques, the work function and charge distribution in gate dielectric film will be changed, although there is no direct interaction between the semiconductor surface and the analyte polymer, however the electric field in the surface channel was modified since the presence of the analyte polymer, so the channel conductivity is changed according to the self-assembled polar molecules. For our sensors being made, the milliampere magnitude response of conducting currents for each polar molecule was measured with clearly detective sensitivity. For sensors with different sensing area of W/L=50, 100, 150, the average slope which can be extracted from the measured I-V curves is 0.36mA, 0.70mA, 1.22mA/per unit of carbon for alkyl-acid; 0.38mA, 0.66mA, 1.12mA/per unit of carbon for alkyl-alcohol; -0.21mA, -0.36mA, -0.44mA/per unit of carbon for alkyl-amine, respectively.
机译：化学敏感的场效应传感器采用简化的硅芯片技术制成，其制造工艺流程是基于仅使用6个图案掩模的金属栅极CMOS技术而设计的。由于传感器是在耗尽模式下制成的，因此它们被作为场调制电阻器进行了测量。当使用自组装技术将选定的极性分子作为分析物聚合物而不是栅极金属涂覆在传感器的栅极区域上时，尽管在栅极电介质膜之间没有直接相互作用，但栅极介电膜中的功函数和电荷分布将发生变化。半导体表面和被分析物聚合物，但是由于被分析物聚合物的存在，表面通道中的电场被改变，因此通道电导率根据自组装极性分子而改变。对于我们制造的传感器，每个极性分子的导电电流的毫安量级响应都以明显的检测灵敏度进行了测量。对于W / L = 50、100、150的不同感测面积的传感器，可以从测得的I-V曲线中提取的平均斜率是0.36mA，0.70mA，1.22mA /每单位烷基碳碳。烷基醇每单位碳0.38mA，0.66mA，1.12mA /每单位碳;对于烷基胺，每单位碳分别为-0.21mA，-0.36mA，-0.44mA /每单位碳。

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