A novel physical model for the SCR ESD protection device

机译：SCR ESD保护设备的新型物理模型

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The SCR (silicon controlled rectifier) is one of the most efficient ESD protection devices. In order to improve the accuracy, convergence, scalability, and the parameter extraction and support time, a new model was developed. It aims to reach its goals through a stronger relation between the physical phenomena and its constitutive equations. The compact model was validated in CMOS 40 nm and CMOS 130 nm technologies.

机译：SCR（硅控制整流器）是最有效的ESD保护设备之一。为了提高准确性，收敛，可伸缩性和参数提取和支持时间，开发了一种新模型。它旨在通过物理现象与其本构方程之间的更强烈关系达到目标。紧凑型模型在CMOS 40 NM和CMOS 130 NM技术中验证。

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《2010 32nd Electrical Overstress/ Electrostatic Discharge Symposium》|2010年|1-10|共10页
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Romanescu Alexandru; Fonteneau Pascal; Legrand Charles-Alexandre; Ferrari Philippe; Arnould Jean-Daniel; Manouvrier Jean-Robert; Beckrich-Ros Helene;
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中图分类电器;
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1. ESD Protection Design for I/O Cells With Embedded SCR Structure as Power-Rail ESD Clamp Device in Nanoscale CMOS Technology [J] . Ming-Dou Ker, Kun-Hsien Lin IEEE Journal of Solid-State Circuits . 2005,第11期

机译：纳米CMOS技术中具有嵌入式SCR结构作为电源轨ESD钳位设备的I / O单元的ESD保护设计
2. Analysis of reliability and optimization of ESD protection devices supported by modeling and simulation [J] . A. Chvala, D. Donoval, P. Beno, Microelectronics reliability . 2012,第6期

机译：建模和仿真支持的ESD保护设备的可靠性分析和优化
3. Compact modeling of on-chip ESD protection devices using Verilog-A [J] . Junjun Li, Joshi S., Barnes R., IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems . 2006,第6期

机译：使用Verilog-A的片上ESD保护器件的紧凑模型
4. A novel physical model for the SCR ESD protection device [C] . Romanescu Alexandru, Fonteneau Pascal, Legrand Charles-Alexandre, 2010 32nd Electrical Overstress/ Electrostatic Discharge Symposium . 2010

机译：SCR ESD保护设备的新型物理模型
5. Design, characterization and compact modeling of novel silicon controlled rectifier (SCR)-based devices for electrostatic discharge (ESD) protection applications in integrated circuits. [D] . Lou, Lifang. 2008

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6. Robust and Latch-Up-Immune LVTSCR Device with an Embedded PMOSFET for ESD Protection in a 28-nm CMOS Process [O] . Ruibo Chen, Hongxia Liu, Wenqiang Song, 2020

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A novel physical model for the SCR ESD protection device

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