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首页> 外文会议>Conference on physics of medical imaging >Integration of an Amorphous Silicon Passive Pixel Sensor Array with a Lateral Amorphous Selenium Detector for Large Area Indirect Conversion X-ray Imaging Applications
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Integration of an Amorphous Silicon Passive Pixel Sensor Array with a Lateral Amorphous Selenium Detector for Large Area Indirect Conversion X-ray Imaging Applications

机译：非晶硅被动像素传感器阵列与横向非晶硒探测器的集成，用于大面积间接转换X射线成像应用

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Previously, we reported on a single-pixel detector based on a lateral a-Se metal-semiconductor-metal structure, intended for indirect conversion X-ray imaging. This work is the continuous effort leading to the first prototype of an indirect conversion X-ray imaging sensor array utilizing lateral amorphous selenium. To replace a structurally-sophisticated vertical multilayer amorphous silicon photodiode, a lateral a-Se MSM photodetector is employed which can be easily integrated with an amorphous silicon thin film transistor passive pixel sensor array. In this work, both 2×2 macro-pixel and 32×32 micro-pixel arrays were fabricated and tested along with discussion of the results.
机译：先前，我们报道了一种基于横向a-Se金属-半导体-金属结构的单像素检测器，旨在用于间接转换X射线成像。这项工作是不断的努力，导致了使用侧向非晶态硒的间接转换X射线成像传感器阵列的第一个原型。为了替代结构复杂的垂直多层非晶硅光电二极管，采用了横向a-Se MSM光电探测器，该探测器可以轻松地与非晶硅薄膜晶体管无源像素传感器阵列集成在一起。在这项工作中，制造并测试了2×2宏像素阵列和32×32微型像素阵列，并讨论了结果。

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