A 25 GHz 3.3 dB NF Low Noise Amplifier based upon Slow Wave Transmission Lines and the 0.18 μm CMOS Technology

机译：基于慢波传输线和0.18μmCMOS技术的25 GHz 3.3 DB NF低噪声放大器

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A 25 GHz low noise amplifier using standard 0.18 μm digital CMOS technology is presented. Matching networks were based upon slow wave transmissions lines. Peak gain of 12.8 dB at 24 GHz and in-band minimum noise figure less than 4 dB were obtained at a power consumption of 8 mW. These record results demonstrate the usefulness of the slow wave transmission line approach. A compact model of slow wave transmission lines is briefly described as well.

机译：提出了使用标准0.18μm数字CMOS技术的25 GHz低噪声放大器。匹配网络基于慢波变速器线。在8兆瓦的功耗下获得24 GHz和带内最小噪声系数的12.8dB的峰值增益。这些记录结果表明了慢波传输线路方法的有用性。简要描述了一种紧凑的慢波传输线模型。

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《IEEE Radio Frequency Integrated Circuits Symposium》|2008年||共4页
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作者
A. Sayag; S. Levin; D. Regev; D. Zfira; S. Shapira; D. Goren; D. Ritter;
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原文格式 PDF
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中图分类 TN45-53;
关键词
CMOS; Slow wave transmission line; Low noise amplifier (LNA); k-band; RLCG;

机译：CMOS;慢波传输线;低噪声放大器（LNA）;K频段;RLCG;

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专利

1. A 24-GHz 3.9-dB NF low-noise amplifier using 0.18 /spl mu/m CMOS technology [J] . Shin S.-C., Ming-Da Tsai, Ren-Chieh Liu, IEEE microwave and wireless components letters . 2005,第7期

机译：采用0.18 / spl mu / m CMOS技术的24 GHz 3.9 dB NF低噪声放大器
2. 11.81 mW 3.1-10.6 GHz ULTRAWIDEBAND LOW-NOISE AMPLIFIER WITH 2.87±0.19 dB NOISE FIGURE AND 12.52±0.81 dB Gain Using 0.18μm CMOS Technology [J] . Chia-Hsing Wu, Yo-Sheng Lin, Chien-Chin Wang Microwave and optical technology letters . 2012,第6期

机译：11.81 mW 3.1-10.6 GHz超宽带低噪声放大器，噪声系数为2.87±0.19 dB，采用0.18μmCMOS技术的增益为12.52±0.81 dB
3. A 2.3/3.3-GHz Dual Band Low Noise Amplifier Using Switchable Load Inductor in 0.18-um CMOS Technology [J] . Taufiq Alif Kurniawan, Hsiao-Chin Chen Makara Seri Teknologi . 2018,第3期

机译：采用0.18um CMOS技术的可开关负载电感的2.3 / 3.3GHz双频段低噪声放大器
4. A 25 GHz 3.3 dB NF Low Noise Amplifier based upon Slow Wave Transmission Lines and the 0.18 μm CMOS Technology [C] . A. Sayag, S. Levin, D. Regev, IEEE Radio Frequency Integrated Circuits Symposium . 2008

机译：基于慢波传输线和0.18μmCMOS技术的25 GHz 3.3 DB NF低噪声放大器
5. A 1V transformer-feedback low-noise amplifier for 5--6GHz WLAN in 0.18 micron CMOS. [D] . Cassan, David J. 2002

机译：用于0.18微米CMOS中5--6GHz WLAN的1V变压器反馈低噪声放大器。
6. A Four-Channel Low-Noise Readout IC for Air Flow Measurement Using Hot Wire Anemometer in 0.18 μm CMOS Technology [O] . Kyeongsik Nam, Hyungseup Kim, Yongsu Kwon, 2021

机译：一种四通道低噪声读出IC用于空气流量测量使用热线风速计在0.18μmCMOS技术中
7. A 2.3/3.3-GHz Dual Band Low Noise Amplifier Using Switchable Load Inductor in 0.18-um CMOS Technology [O] . Taufiq Alif Kurniawan, Hsiao-Chin Chen 2019

机译：2.3 / 3.3-GHz双频带低噪声放大器，使用0.18-UM CMOS技术中的可切换负载电感器
8. 94GHz Temperature Compensated Low Noise Amplifier in 45nm Silicon-on- Insulator Complementary Metal-Oxide Semiconductor (SOI CMOS). [R] . Y. Xu 2014

机译：采用45nm绝缘硅互补金属氧化物半导体（sOI CmOs）的94GHz温度补偿低噪声放大器。

A 25 GHz 3.3 dB NF Low Noise Amplifier based upon Slow Wave Transmission Lines and the 0.18 μm CMOS Technology

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