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外文会议>IEEE International Electron Devices Meeting
>Charge-injection phase change memory with high-quality GeTe/Sb2Te3 superlattice featuring 70-#x03BC;A RESET, 10-ns SET and 100M endurance cycles operations
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Charge-injection phase change memory with high-quality GeTe/Sb2Te3 superlattice featuring 70-#x03BC;A RESET, 10-ns SET and 100M endurance cycles operations
We developed a high quality charge-injection GeTe/Sb2Te3 superlattice phase change memory. A RESET-current of 70 μA and a SET-speed of 10 ns, the fastest ever reported, were obtained. Transmission electron microscopy analysis showed that the superlattice structure was maintained after 1 million (M) endurance. Even 100 M cycle endurance was possible, and these results conclusively proved non-melting resistive switching.
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机译：我们开发了高质量的电荷注入GeTe / Sb 2 Te 3 超晶格相变存储器。获得了70μA的RESET电流和10 ns的SET速度，这是有史以来最快的速度。透射电子显微镜分析表明，经100万（M）耐力后，超晶格结构得以保持。甚至100 M的循环寿命也是可能的，这些结果最终证明了非熔融电阻切换。
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