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首页> 外文期刊>Journal of Applied Physics >Crystalline structure of GeTe layer in GeTe/Sb2Te3 superlattice for phase change memory
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Crystalline structure of GeTe layer in GeTe/Sb2Te3 superlattice for phase change memory

机译：GeTe / Sb2Te3超晶格中用于相变存储的GeTe层的晶体结构

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摘要

Low electric-power switching between set and reset has been confirmed to occur in a GeTe/Sb2Te3 superlattice (SL) film. This sort of operation will be essential for future phase-change random access memories. However, the crystalline structure of the SL, especially the key layer of GeTe, has not been studied sufficiently. The GeTe crystalline structure in the SL was thus investigated in XRD experiments, and the order parameter S was estimated. With the bulk crystalline structure of GeTe, S was about 1.76–1.77, which is quite different from the desirable value of around 1. To solve this unreasonable S, GeTe crystalline structures with conceivable real vacancies were modeled, and their Ss’ were estimated. Consequently, a GeTe crystalline structure with 0.7 ≦ S ≦ 1 was discovered which differed from bulk. It was also verified that the previously thought to be imaginary vacancy layer of GeTe in the SL estimated from a first-principle computer simulation is very likely to be a real vacancy layer.
机译：已确认在GeTe / Sb2Te3超晶格（SL）膜中发生了设置和复位之间的低电切换。这种操作对于将来的相变随机存取存储器将是必不可少的。但是，SL的晶体结构，尤其是GeTe的关键层，尚未得到足够的研究。因此，在XRD实验中研究了SL中的GeTe晶体结构，并估计了有序参数S。在GeTe的整体晶体结构中，S约为1.76-1.77，与理想值1左右有很大差异。为解决这一不合理的S，对具有实际空位的GeTe晶体结构进行了建模，并估算了它们的S'。结果，发现了具有0.7≤S≤1的GeTe晶体结构，其不同于块体。还证实了，根据第一性原理计算机仿真估计，以前认为是SL中GeTe的虚空层很可能是真实的空层。

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  • 来源
    《Journal of Applied Physics》 |2012年第3期|p.1-4|共4页
  • 作者

    Soeya Susumu; Shintani Toshimichi;

  • 作者单位

    National Institute of Advanced Industrial Science and Technology (AIST) Collaborative Research Team, Green Nanoelectronics Center, West 7A, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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