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Superlattice memory having GeTe layer and nitrogen-doped Sb₂Te₃layer and memory device having the same

机译：具有GeTe层和氮掺杂的Sb _{2 Te _{3 层的超晶格存储器及其存储装置}}

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According to one embodiment, a superlattice memory comprises substrate, a first electrode provided on the substrate, a second electrode arranged in opposition to the first electrode, and a superlattice structure part provided between the first electrode and the second electrode, which includes first chalcogen compound layers, second chalcogen compound layers the composition of which is different from the first chalcogen compound, and contains Ge, and third chalcogen compound layers in which one of N, B, C, O, and F is added to the first chalcogen compound, stacked one on another.

机译：根据一个实施例，超晶格存储器包括基板，设置在基板上的第一电极，与第一电极相对布置的第二电极以及设置在第一电极和第二电极之间的包括第一硫属元素化合物的超晶格结构部分。层，第二硫属元素化合物层，其组成与第一硫属元素化合物不同，并且包含Ge;第三硫属元素化合物层，其中将N，B，C，O和F中的一个添加到第一硫属元素化合物中，一个接一个

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公开/公告号US10283707B2

专利类型
公开/公告日2019-05-07

原文格式PDF
申请/专利权人 KABUSHIKI KAISHA TOSHIBA;
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申请/专利号US201715457479
发明设计人 YOSHIKI KAMATA;
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申请日2017-03-13
分类号H01L45;H01L27/24;H01L29/15;
国家 US
入库时间 2022-08-21 12:11:35

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Superlattice memory having GeTe layer and nitrogen-doped Sb2Te3 layer and memory device having the same

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Superlattice memory having GeTe layer and nitrogen-doped Sb₂Te₃layer and memory device having the same