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Q-Switched Yb~(3+):Sr_(5)(PO_(4))_(3)F three-level laser operation at 985 nm and efficient doubling at 492.5 nm

机译:Q开关YB〜(3 +):SR_(5)(PO_(4))_(3)F三级激光操作在985nm处,在492.5 nm下有效加倍

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Ytterbium doped Sr_(5)(PO_(4))_(3)F (S-FAP) has already been demonstrated as an ideal laser material for medium power applications in a diode-pumped solid-state laser oscillator and high repetition rate amplifier system. Ytterbium has a simple electronic structure in the near infrared leading to a low quantum defect, excited state absorption, and nonradiative decay. S-FAP lasers at 985 nm can be efficiently pumped by diodes at 900 nm and have the added advantage of a low quantum defect (0.09) yielding efficient diode pumped operation. In addition, the advent of an efficient diode-pumped, doubled S-FAP laser at 492.5 nm represents an attractive blue light source. The S-FAP crystals, which are uniaxial, were pumped with the polarization parallel to the c-axis where the absorption cross section is highest (σ_(abs)=9.0×10~(-20) cm~(2) at 900 nm), and the observed emission occurred orthogonal to the c-axis where the emission cross section is strongest (σ_(em)=10×10~(-20) cm~(2) at 985 nm). Recent quasi-cw laser experiments at 985 nm showed this material to have an intrinsic slope efficiency near the quantum defect limit, where the quantum defect efficiency is defined as η_(qd)=λ_(Pump)/λ_(Laser)=0.91, where λ_(Pump) is the pump laser wavelength and λ_(Laser) is the laser wavelength. A half-concentric cavity was designed (shown Fig. 1) to allow efficient pumping using a readily available Cr:LiSAF laser tuned to 900 nm operating at 1 Hz. The spatially flat-top pump light was focused through the flat end of the resonator onto an anti-reflection coated S-FAP crystal. A polarizer and an electro-optic modulator were used as a Q-switch with a high extinction ratio to produce Q-switched pulses at 1 Hz with a maximum energy of 9.4 mJ and a minimum pulsewidth of 8.8 ns.
机译:YTTerbium掺杂SR_(5)(PO_(4))(PO_(4))_(3)F(S-FAP)已经证明是在二极管泵浦固态激光振荡器和高重复率放大器中的中型电力应用的理想激光材料系统。 YTTerbium在近红外线具有简单的电子结构,导致较低的量子缺陷,激发状态吸收和非脱模。在985nm处的S-FAP激光器可以通过900nm的二极管有效地泵送,并且具有低量子缺陷(0.09)的额外优点,从而产生有效的二极管泵送操作。此外,在492.5nm的高效二极管泵送的双倍的S-FAP激光器的出现代表了一个有吸引力的蓝光源。具有单轴的S-FAP晶体,与平行于900nm的吸收横截面(Σ_(ABS)= 9.0×10〜(-20)cm〜(2),泵泵出来的偏振。 ),并且观察到的发射发生在985nm的发射横截面最强的C轴(σ_(em)= 10×10〜(-20)cm〜(2))。最近在985nm处的Quasi-CW激光实验显示该材料在量子缺陷极限附近具有内在斜率效率,其中量子缺陷效率被定义为η_(QD)=λ_(泵)/λ_(激光)= 0.91 λ_(泵)是泵激光波长和λ_(激光)是激光波长。设计了半同心腔(如图1所示),以允许使用易于使用的CR:Lisaf激光器调谐到1 Hz的900nm。空间平顶泵浦光通过谐振器的扁平端聚焦到抗反射涂覆的S-FAP晶体上。偏振器和电光调制器用作具有高消光比的Q开关,以在1 Hz处产生Q开关脉冲,最大能量为9.4 MJ,最小脉冲宽度为8.8ns。

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