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首页> 外文会议>Conference on metrology, inspection, and process control for microlithography XXVII >Use of TSOM for sub-11 nm node pattern defect detection and HAR features
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Use of TSOM for sub-11 nm node pattern defect detection and HAR features

机译：使用TSOM进行11 nm以下节点图案缺陷检测和HAR功能

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In-line metrologies currently used in the semiconductor industry are being challenged by the aggressive pace of device scaling and the adoption of novel device architectures. In defect inspection, conventional bright field techniques will not likely be able to meet defect capture rate requirements beyond the 16 nm node. Electron beam-based inspection is able to meet resolution limits well below this node, but operates at a significantly lower throughput. It, therefore, has become necessary to explore alternative approaches with the potential to meet both resolution and throughput requirements. Critical dimension (CD) metrology, on the other hand, is less challenged by resolution than by the increasingly 3D nature of the information that needs to be collected from modern device structures. It is therefore valuable to explore metrology techniques that are sensitive to spatial variations across the entire volume of the interrogated feature. Through-focus scanning optical microscopy (TSOM) is a novel method that allows conventional optical microscopes to collect dimensional information down to the nanometer level by combining 2D optical images captured at several through-focus positions. This relatively simple technique is inexpensive and has high throughput, making it attractive for a variety of semiconductor metrology applications, such as CD, photomask, overlay, and defect metrologies. In this work, we expand on the analysis of TSOM as a potential technique for defect inspection and study its ability to characterize 3D high aspect ratio (HAR) features. For defect inspection applications, we extend the simulation space well beyond the 11 nm node, based on dense features with CDs ranging from 13 nm to 7 nm. The optical response of a variety of patterned defect modes, sizes, and heights was likewise explored under different polarization and wavelength illumination conditions. Results indicate TSOM has the ability to extract defect signal for most of the cases studied. Work on HAR features focused on exploring 3D sensitivity to features such as bottom CD, sidewall angle, and depth. HAR targets were studied using simulations down to the 11 nm node. Promising results were observed in terms of sensitivity to bottom CD, sidewall angle, and depth.
机译：目前在半导体行业中使用的在线计量受到设备缩放的侵略性步伐和采用新型设备架构的挑战。在缺陷检测中，传统的明盘技术不太可能能够满足超过16nm节点的缺陷捕获率要求。基于电子束的检查能够满足以下节点以下的分辨率限制，但以显着降低的吞吐量运行。因此，它已经有必要探索具有符合分辨率和吞吐量要求的潜在途径的替代方法。另一方面，临界维度（CD）计量不如通过从现代设备结构所需的信息所需的信息的越来越多的3D性质挑战。因此，探索对整个询问特征的整个体积的空间变化敏感的计量技术是有价值的。通过聚焦扫描光学显微镜（TSOM）是一种新颖的方法，其允许传统光学显微镜通过在几个直通焦点位置组合捕获的2D光学图像来将尺寸信息收集到纳米电平。这种相对简单的技术是便宜的并且具有高的吞吐量，使其对各种半导体计量应用具有吸引力，例如CD，光掩模，覆盖和缺陷等学。在这项工作中，我们扩展了TSOM作为缺陷检测潜在技术的分析，并研究其表征3D高纵横比（HAR）特征的能力。对于缺陷检测应用，我们基于具有从13nm至7 nm的CD的密集功能扩展到11 NM节点之外的仿真空间。同样在不同的极化和波长照明条件下探索各种图案化缺陷模式，尺寸和高度的光学响应。结果表明TSOM具有提取研究的缺陷信号的能力。在HAR功能上致力于探索3D敏感性，以底CD，侧壁角度和深度等特征。使用模拟向下到11 NM节点进行了HAR目标。在对底部CD，侧壁角度和深度的敏感性方面观察有希望的结果。

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