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首页> 外文会议>SiGe, Ge, and related compounds: materials, processing, and devices symposium;Meeting of The Electrochemical Society >Electrical and Microstructural Characterization of Cu-germanide Contacts Formed on P-type Ge Substrate
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Electrical and Microstructural Characterization of Cu-germanide Contacts Formed on P-type Ge Substrate

机译：在P型Ge衬底上形成的锗锗铜触点的电和微观结构表征

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摘要

We have investigated the electrical and microstructural properties of Cu-germanides formed on p-type Ge substrate as a function of rapid thermal annealing (RTA) temperature. As increasing RTA temperatures, Cu films reacted with Ge and formed Cu-germanides. The Cu_3Ge phase appears to be the dominant phase along with Cu_5Ge_2 phase at annealing temperatures of 500 and 600 °C. The sheet resistance and specific contact resistivity were investigated as a function of germanide formation temperature. A minimum specific contact resistivity value of 6.19×10~(-6) Ωcm~2 is obtained after annealing at 400 °C associated with the formation of low stoichiometric Cu_3Ge phase. The sheet resistance and specific contact resistivity increased after rapid thermal annealing at temperatures ＞500 °C, indicated the degradation of the contact properties and could be associated with the formation of copper rich Cu_5Ge_2 phase and the loss of structural integrity with increasing annealing temperature.
机译：我们已经研究了在p型Ge衬底上形成的Cu-锗化物的电学和微观结构特性，该特性是快速热退火（RTA）温度的函数。随着RTA温度的升高，Cu膜与Ge反应并形成Cu-锗烷化物。在500和600°C的退火温度下，Cu_3Ge相与Cu_5Ge_2相似乎是主要相。研究了薄层电阻和比接触电阻率随锗化物形成温度的变化。与低化学计量的Cu_3Ge相形成相关的400°C退火后，获得的最小比电阻率为6.19×10〜（-6）Ωcm〜2。在> 500°C的温度下进行快速热退火后，薄层电阻和比接触电阻率增加，这表明接触性能下降，并且可能与富铜Cu_5Ge_2相的形成以及随着退火温度升高而导致的结构完整性损失有关。

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