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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Microstructural and electrical properties of Cu-germanide formed on p-type Ge wafer
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Microstructural and electrical properties of Cu-germanide formed on p-type Ge wafer

机译：p型Ge晶片上形成的锗锗酸铜的微观结构和电学性质

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摘要

We have investigated the microstructural and electrical properties of Cu-germanides formed by the.deposition of Cu on Ge wafer, followed by rapid thermal annealing (RTA) process at the temperatures in the range of 300-700 degrees C. Regardless of RTA temperature, the Cu3Ge was the only phase formed as a result of solid-state reaction between Cu and Ge driven by RTA process. The RTA temperature dependency of specific contact resistivity of Cu3Ge was explained in terms of its structural evolution caused by RTA process. The RTA process at 400 degrees C led to the formation of Cu3Ge film having highly uniform surface and interface morphologies, allowing the minimum value of the specific contact resistivity. The samples annealed above 500 degrees C underwent the severe structural degradation of Cu3Ge, resulting in a rapid increase in the specific contact resistivity. After RTA at 700 degrees C, pyramidal Cu3Ge islands standing on a corner, distributed along Ge <110> direction were formed with epitaxial relationship on underlying Ge. (C) 2015 Elsevier B.V. All rights reserved.
机译：我们已经研究了在锗晶片上沉积铜，然后在300-700摄氏度范围内的温度下进行快速热退火（RTA）工艺形成的铜锗化物的微观结构和电学性质。无论RTA温度如何， Cu3Ge是唯一由RTA工艺驱动的Cu和Ge固相反应形成的相。根据RTA工艺引起的Cu3Ge的结构演化，解释了RTA温度与Cu3Ge的比接触电阻率的关系。在400摄氏度下的RTA工艺导致形成了具有高度均匀的表面和界面形态的Cu3Ge膜，从而使比接触电阻率达到最小值。在500摄氏度以上退火的样品经历了Cu3Ge的严重结构降解，导致比接触电阻率迅速增加。在700°C的温度下经过RTA之后，在下层的Ge上以外延关系形成了沿Ge <110>方向分布的，位于角落的金字塔形Cu3Ge岛。 （C）2015 Elsevier B.V.保留所有权利。

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