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Effects of proton irradiation on InGaAs/AlGaAs multiple quantum well modulators for free-space optical communication

机译：质子辐射对InGaAs / Algaas多量子井调制器的影响用于自由空间光学通信

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Recently large area multiple quantum well (MQW) optical modulators have been coupled to corner-cube optical retro-reflectors to allow free-space optical communications using a lightweight, low-power device. A pointing/tracking system and laser are required only on one end of the link. Such a system is attractive for ground-to-space links or space-to-space communication between a satellite and a microsat. An important question for these potential spaceborne systems is the radiation tolerance of MQW modulator, which is the principle active component. To investigate this subject, we irradiated three 0.5 cm diameter InGaAs/AlGaAs modulators using a sequence of bombardments of 1 MeV protons. One of the devices was irradiated while under a normal operating reverse bias voltage of 15 V; the other devices were unbiased. After each exposure the electronic, optical and modulation characteristics of the modulators were evaluated. No degradation was observed until a cumulative fluence of 1/spl times/10/sup 14/ protons/cm/sup 2/, equivalent to an ionizing radiation dose of approximately 200 Mrad(Si).
机译：最近大面积多量子阱（MQW）光学调制器已经耦合到角隅棱镜反射器，以允许使用轻质，低功率器件的自由空间光通信。仅在链路的一端仅需要指向/跟踪系统和激光。这种系统对于卫星和微观方式之间的地间隙或空间通信是有吸引力的。对于这些潜在的太空系统的重要问题是MQW调制器的辐射耐受性，即原理是活性成分。为了调查该主题，我们使用1 meV质子的轰炸序列照射了三个0.5厘米直径的InGaAs / Algaas调节剂。在15V的正常操作反向偏置电压下照射其中一个设备;其他设备是无偏见的。在每次曝光后，评估调制器的电子，光学和调制特性。未观察到降解降解，直至1 / SPL次/ 10 / SOP 14 /质子/ cm / sup 2 /，相当于约200mRad（Si）的电离辐射剂量。

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