The precision voltage references for the radiation-hardened bi-FET technological process

著录项

• 来源
  《IEEE East-West Design Test Symposium》|2014年|1-4|共4页
• 会议地点
• 作者

  Starchenko Evgeniy /I/.; Prokopenko Nikolay N.; Yugai Vladislav Ya;

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• 作者单位

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• 会议组织
• 原文格式 PDF
• 正文语种
• 中图分类
• 关键词

  field effect transistors; monolithic integrated circuits; p-n junctions; radiation hardening (electronics); reference circuits; DS; VR; differential stage; negative temperature drift; p-n-junction; p-type channel; positive temperature drift; precision voltage references; radiation-hardened bi-FET technological process; voltage power supply; Field effect transistors; Photonic band gap; Resistance; Resistors; Temperature; Temperature dependence;

  机译：场效应晶体管;单片集成电路; pn结;辐射硬化（电子）;参考电路; DS; VR;差分级;负温度漂移; pn结; p型沟道;正温度漂移;精密电压基准;辐射-淬火双FET工艺流程;电压电源;场效应晶体管;光子带隙;电阻;电阻;温度;温度依赖性;