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3C-SiC-on-Si based MEMS packaged capacitive pressure sensor operating up to 500 ??C and 5 MPa

机译:基于3C-SiC-Si的MEMS封装电容式压力传感器,最高工作温度为500℃和5 MPa

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This paper reports a packaged MEMS capacitive pressure sensor based 3C-SiC using bulk-micromachining technology that operates on the pressure up to 5.0 MPa and temperature up to 500 C. The diaphragm employs a single-crystal 3C-SiC thin film that is back-etched from its Si substrate. A photosensitive ProTEK PSB is used as a protection mask layer to reduce the process steps. We compare our results with similar work that also employs a single-crystal 3C-SiC-on-Si capacitive pressure sensor with ceramic package. The MEMS capacitive pressure sensor is employed with 3C-SiC that was performed using hot wall low pressure chemical vapor deposition (LPCVD) reactors at the Queensland Micro and Nanotechnology Center (QMNC), Griffith University. This paper also focuses on comparing those two highest efficiency distributions in MEMS capacitive pressure sensor device to other types of MEMS capacitive pressure sensor. Different temperature, hysteresis and repeatability tests are presented to demonstrate the functionality of the packaged MEMS capacitive pressure sensor. As expected, the output hysteresis has low hysteresis (less than 0.05%) which has inflexibility greater than traditional silicon. By utilizing this low hysteresis was revealed the packaged MEMS capacitive pressure sensor has high repeatability and stability of the sensor.
机译:本文报告了一种采用3C-SiC封装的MEMS电容式压力传感器,采用体微机械加工技术,该技术可在高达5.0 MPa的压力和高达500 C的温度下工作。膜片采用单晶3C-SiC薄膜,该薄膜背面从其硅衬底上蚀刻。感光的ProTEK PSB用作保护掩模层,以减少工艺步骤。我们将我们的结果与类似的工作进行了比较,该工作也采用了具有陶瓷封装的单晶3C-SiC-Si-Si电容式压力传感器。 MEMS电容式压力传感器与3C-SiC一起使用,这是由格里菲斯大学昆士兰州微纳米技术中心(QMNC)的热壁低压化学气相沉积(LPCVD)反应器完成的。本文还重点比较了MEMS电容式压力传感器设备中的这两个最高效率分布与其他类型的MEMS电容式压力传感器。提出了不同的温度,磁滞和可重复性测试,以证明封装的MEMS电容式压力传感器的功能。如预期的那样,输出磁滞具有较低的磁滞(小于0.05%),其挠性比传统硅更大。通过利用这种低磁滞现象,揭示了封装的MEMS电容式压力传感器具有很高的可重复性和传感器的稳定性。

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