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首页> 外文会议>IEEE Regional Symposium on Micro and Nano Electronics >Investigation of the annealing time effects on Cu deposited CdTe thin films for photovoltaic application
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Investigation of the annealing time effects on Cu deposited CdTe thin films for photovoltaic application

机译：退火时间对光伏应用Cu沉积CdTe薄膜的影响

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Firstly, Cadmium Telluride (CdTe) thin films have been deposited on cleaned soda lime glass substrates at 300°C by using the RF magnetron sputtering technique. After that, Cu thin film was deposited for 5 minutes at 200°C on top of CdCl treated CdTe thin films by sputtering. Subsequently, CdTe and Cu stacks were annealed at 400°C for 15 minutes, 20 minutes and 25 minutes in a vacuum furnace. The influence of different annealing times on the structural, topographical and electrical properties of Cu sputtered CdTe thin films were then examined by XRD, AFM and Hall Effect measurement, respectively. XRD patterns reveal that, one CdTe peak corresponding to the (111)cub reflection planes at 2θ=23.8 and another low intensity CuTe peak representing (200) hexagonal reflection planes at around 2θ=24.8 were found for all the annealing times. Surface roughness and topography were viewed from the AFM images. Noteworthy changes were observed in the films surface roughness due to the different annealing times. The surface roughness values imply rising trend for lower annealing times. Bulk carrier density was in the order of 10cm. The highest carrier concentration of 7.1×10cm was achieved for the films annealed for 15 min.
机译：首先，通过使用射频磁控溅射技术，在300°C下将碲化镉（CdTe）薄膜沉积在清洁的钠钙玻璃基板上。之后，通过溅射在200℃下在经CdCl处理的CdTe薄膜的顶部上沉积Cu薄膜5分钟。随后，将CdTe和Cu叠层在真空炉中在400℃下退火15分钟，20分钟和25分钟。然后分别通过X射线衍射，原子力显微镜和霍尔效应测量，考察了不同退火时间对溅射CdTe薄膜的结构，形貌和电学性能的影响。 XRD图谱显示，在所有退火时间中，发现一个对应于（111）cub反射平面的CdTe峰在2θ= 23.8处，另一个低强度CuTe峰代表（200）六角形反射面在2θ= 24.8附近。从AFM图像观察表面粗糙度和形貌。由于不同的退火时间，在膜表面粗糙度中观察到值得注意的变化。表面粗糙度值意味着随着退火时间的缩短而上升的趋势。载流子密度约为10cm。退火15分钟的薄膜的最高载流子浓度达到7.1×10cm。

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