Microwave irradiation assisted synthesis of silicon carbide nanowhiskers

机译：微波辐射辅助合成碳化硅纳米晶须

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Silicon carbide (SiC) is an important ceramic for engineering and industrial applications in harsh conditions of high temperature oxidative environment. For the synthesis of SiC in manufacturing process, conventional heating process is commonly used. In this study, SiC nanowhiskers are synthesized by microwave heating from mixture of graphite and silica. Graphite and silica in the ratio of 3:1 were mixed in ultrasonic bath using ethanol as medium for one hour. The mixture was then dried on hotplate and cold pressed uniaxially into a pellet die. The pellet was then heated by using laboratory microwaves oven to 1400°C at heating rate of 20°C /min and temperature was kept for 30 minutes. Scanning electron microscopy (SEM) showed that SiC nanowhiskers were successfully synthesized. X-ray diffraction (XRD) pattern indicated SiC phase was present after the mixture of graphite and silicon dioxide (SiO) were exposed to microwave irradiation. Electron microscopy analysis showed that the SiC formed was in the form of nanowhiskers.

机译：碳化硅（SiC）是在高温氧化环境的苛刻条件下用于工程和工业应用的重要陶瓷。为了在制造过程中合成SiC，通常使用常规的加热过程。在这项研究中，SiC纳米晶须是通过微波加热从石墨和二氧化硅的混合物中合成的。将石墨和二氧化硅以3：1的比例在超声浴中以乙醇为介质混合1小时。然后将混合物在电热板上干燥，并单轴冷压成颗粒模头。然后通过使用实验室微波炉将粒料以20℃/ min的加热速率加热至1400℃，并将温度保持30分钟。扫描电子显微镜（SEM）表明已成功合成了SiC纳米晶须。 X射线衍射（XRD）图谱表明，在石墨和二氧化硅（SiO）的混合物暴露于微波辐射之后，存在SiC相。电子显微镜分析表明，所形成的SiC为纳米晶须形式。

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《IEEE Regional Symposium on Micro and Nano Electronics》|2015年|1-4|共4页
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Kahar S.M.; Voon C.H.; Hashim U.; Arshad M.K.Md; Ruslinda A.R.; Adelyn P.Y.P; Huda A.R.N.; Lee H.Cheun; Lee C.C.; Rahman W.; Lim B.Y.;
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Electromagnetic heating; Graphite; Microwave imaging; Microwave oscillators; Silicon carbide; X-ray scattering; SiC; graphite; microwave synthesis; scanning electron microscopy; silica; x-ray diffraction;

机译：电磁加热;石墨;微波成像;微波振荡器;碳化硅; X射线散射;碳化硅;石墨;微波合成;扫描电子显微镜;二氧化硅X射线衍射;

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专利

1. Synthesis of Silicon Carbide Nanowhiskers from Graphite and Silica of Different Ratio by Microwave Irradiation Assisted Synthesis [J] . S.M. Kahar, C.H. Voon, C.C. Lee, Materials science forum . 2016,第期

机译：微波辐射辅助合成由不同比例的石墨和二氧化硅合成碳化硅纳米晶须
2. Microwave Irradiation Assisted Synthesis of Silicon Carbide Nanotubes [J] . V.C.S. Tony, C.H. Voon, C.C. Lee, Materials science forum . 2016,第期

机译：微波辐射辅助合成碳化硅纳米管
3. (I007)Synthesis of Silicon Carbide Nanowhiskers by Microwave Heating [J] . S.M.Kahar, C.H.Voon, C.C.Lee 材料とプロセス: 日本鉄鋼協会講演論文集 . 2019,第1a177期

机译：（I007）微波加热合成碳化硅纳米轨
4. Microwave irradiation assisted synthesis of silicon carbide nanowhiskers [C] . Kahar S.M., Voon C.H., Hashim U., IEEE Regional Symposium on Micro and Nano Electronics . 2015

机译：微波辐射辅助合成碳化硅纳米轨
5. Diffusion barriers for silicon carbide particle reinforcements by ion-beam assisted deposition: Effects on interphase stability in silicon carbide(p/beta)-nickel aluminide and silicon carbide(p/gamma)-nickel aluminide composites . [D] . Cai, Zhiwei. 2000

机译：离子束辅助沉积增强碳化硅颗粒扩散的阻挡层：对碳化硅（p /β）-铝化镍和碳化硅（p /γ）-铝化镍复合材料中相间稳定性的影响。
6. Microwave Assisted Synthesis Part 1: Rapid Solventless Synthesis of 3-Substituted Coumarins and Benzocoumarins by Microwave Irradiation of the Corresponding Enaminones [O] . Khadijah M. Al-Zaydi 2003

机译：微波辅助合成第1部分：通过相应的烯胺酮的微波辐射快速合成3-取代的香豆素和苯并香豆素
7. Low-temperature investigations of ion-induced amorphisation in silicon carbide nanowhiskers under helium irradiation [O] . E. Aradi, J. Lewis-Fell, G. Greaves, 2020

机译：氦辐射下碳化硅纳米轨道中离子诱导的无晶体的低温研究
8. Ultrasonic characterization of microwave joined silicon carbide/silicon carbide [R] . House, M. B., Day, P. S. 1997

机译：微波连接碳化硅/碳化硅的超声表征

Microwave irradiation assisted synthesis of silicon carbide nanowhiskers

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