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首页> 外文会议>Conference on Applied Optics and Photonics China >Gamma radiation effects on ZnS/CdTe-passivated HgCdTe detectors with different ZnS thickness
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Gamma radiation effects on ZnS/CdTe-passivated HgCdTe detectors with different ZnS thickness

机译：伽马辐射对具有不同ZnS厚度的ZnS / CDTE钝化的HGCDTE探测器效应

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At present, HgCdTe arrays has been commonly used in photodetectors for infrared detection in space system, where they are exposed to the space radiation environment. For high radiation-tolerance and the optimum performance of the detector, surface-passivation technology that provides long-term stability is required. Double layer of ZnS/CdTe passivant is most recommendable, because ZnS/CdTe-passivated HgCdTe detectors could show great insulating and radiation-tolerant properties. However, the thickness ratio of ZnS and CdTe layers has not been optimized. In this study, the gamma radiation effects on ZnS/CdTe-passivated mid-wavelength HgCdTe arrays with different ZnS-layer thicknesses were investigated, by analyzing the current-voltage curves before and after gamma irradiation at a very low rate. To our surprise, increase of ZnS thickness from 300 nm to 700 nm dramatically improved the radiation tolerance, although ZnS is considered to be vulnerable to gamma irradiation. We hypothesized that gamma radiation could be strongly absorbed by ZnS with sufficient thickness and the transmitted intensity is harmless to the HgCdTe arrays. Therefore, increase of ZnS thickness could protect the HgCdTe arrays from gamma radiation damage. Here, we presented an efficient and easy processing method to increase radiation-tolerant properties of the high performance HgCdTe photodetectors.
机译：目前，HGCDTE阵列通常用于光电探测器，用于空间系统中的红外检测，在那里它们暴露于空间辐射环境。对于高辐射公差和检测器的最佳性能，需要提供长期稳定性的表面钝化技术。双层ZnS / CDTE钝化物是最重要的，因为ZnS / CDTE钝化的HGCDTE检测器可以显示出极高的绝缘和耐辐射性质。然而，ZnS和CdTe层的厚度比尚未得到优化。在该研究中，通过在非常低的速率之前和之后分析电流 - 电压曲线，研究了对具有不同ZnS层厚度的ZnS / CDTE钝化的中波长HGCDTE阵列的伽马辐射效应。为了我们的意外，ZnS厚度从300nm到700nm的增加显着改善了辐射耐受性，尽管ZnS被认为是易受伽马照射的影响。我们假设γ辐射可以通过足够的厚度强烈地吸收，并且透射强度对HGCDTE阵列无害。因此，ZNS厚度的增加可以保护HGCDTE阵列免受伽马辐射损伤。在这里，我们介绍了一种高效且易于处理的方法，以提高高性能HGCDTE光电探测器的耐辐射性。

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