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首页> 外文会议>IEEE MTT-S International Microwave Symposium >Soldered hot-via E-band and W-band power amplifier MMICs for millimeter-wave chip scale packaging
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Soldered hot-via E-band and W-band power amplifier MMICs for millimeter-wave chip scale packaging

机译：焊接的热通道E波段和W波段功率放大器MMIC，用于毫米波芯片级封装

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Novel and realistic application of hot-via interconnects to millimeter-wave active and power MMICs is demonstrated for the first time. Power amplifier MMICs in the 80- and 100-GHz range were successfully designed, assembled, and characterized for wire-bond free chip interconnect technology. With hot-via RF transitions, compact E-band power amplifier MMICs directly soldered onto evaluation boards demonstrate 22-dB gain and over 28-dBm output power in the ETSI band of 81-86 GHz, with little performance degradation compared to reference circuits probed with traditional front-side RF pads. Similarly, a broadband amplifier, when interconnected to its matching PCB, delivers 13-dB of gain in the W-band, and 21-dBm P1dB. To the author's knowledge, this work represents the highest frequency demonstration of any soldered millimeter-wave hot-via active circuits onto standard PCBs, with remarkable measured power performance, closely equaling that of ideally front-side RF probed PA MMICs.
机译：首次展示了热通孔互连在毫米波有源和功率MMIC上的新颖而现实的应用。成功设计，组装了80-GHz和100-GHz范围的功率放大器MMIC，并采用了无焊键合芯片互连技术。通过热导通射频过渡，直接焊接到评估板上的紧凑型E波段功率放大器MMIC在81-86 GHz的ETSI频段内显示22dB的增益和超过28dBm的输出功率，与探查的参考电路相比，性能几乎没有下降与传统的正面RF垫一起使用。同样，宽带放大器连接到其匹配的PCB时，在W波段提供13-dB的增益，在P-dB为21-dBm。据作者所知，这项工作代表了任何焊接到标准PCB上的毫米波热导通有源电路的最高频率演示，具有可观的测量功率性能，与理想的正面RF探针PA MMIC相当。

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