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首页> 外文会议>IEEE International Conference on Plasma Sciences >Investigation of inductively coupled SF6 plasma etching of Si and SiO2 throught a global model coupled with langmuir adsorption kinetics
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Investigation of inductively coupled SF6 plasma etching of Si and SiO2 throught a global model coupled with langmuir adsorption kinetics

机译：通过整体模型与朗缪尔吸附动力学耦合研究硅和二氧化硅的感应耦合SF6等离子体蚀刻

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Summary form only given. Sulfur hexafluoride (SF6) plasmas are commonly used in the deep etching of silicon (Si), silicon oxide (SiO2) and more recently silica glass [1]. Due to the complexity of fluorinated plasma environment during Si-based material etching, there are few works presenting experimental and/or theoretical studies about the chemistry established. However, the chemical behavior of the plasma has a direct influence on the etching characteristics such as etch rate, profile and their microscopic uniformity [2]. Thus, it is interesting to understand the dependence of the plasma chemistry with macroscopic process parameters in order to better understand the process tool as well as to optimize it. In this work, a global model coupled with Langmuir adsorption kinetics has been developed to study the plasma chemistry of reactants and products during SF6 ICP etching of Si and SiO2. A complete set of gas phase reactions with respective reaction rates was mounted for SF6 plasma considering the last database presented in literature. Moreover, through the Langmuir adsorption kinetics model the products of interaction plasma - Si-based substrate surface (for example, SiFx species, x = 0-4) are calculated and considered as a second gas source in the balance particle formulation of global model. We investigated the dependence of the neutral and charged species density as a function of gas pressure, mass flow rate, discharge power, substrate-holder bias and substrate material (Si or SiO2). The results indicate that the density of the main product of Si etching, SiF4, can reach the order of the density of SF6 specie, confirming the high etch rates observed experimentally for the Si in this type of reactor [3]. Contrary fact is observed for the SiO2 etching, where the strong link between the Si and oxygen atoms limits the desorption process of Si gas phase species. Some results were compared with experimental results from literature.
机译：摘要表格仅给出。六氟化硫（SF6）等离子体通常用于硅（Si），氧化硅（SiO 2）和更热硅玻璃的深蚀刻[1]。由于在基于Si的材料蚀刻过程中氟化等离子体环境的复杂性，少量作品呈现了关于建立的化学的实验和/或理论研究。然而，等离子体的化学行为对蚀刻特性（例如蚀刻速率，曲线及其微观均匀性）具有直接影响[2]。因此，有趣的是要理解血浆化学与宏观工艺参数的依赖性，以便更好地理解过程工具以及优化它。在这项工作中，已经开发出一种与Langmuir吸附动力学相结合的全局模型，以研究Si和SiO2的SF6 ICP蚀刻中反应物和产品的血浆化学。考虑到文献中的最后一个数据库，安装了具有相应反应速率的一组具有相应反应速率的气相反应。此外，通过Langmuir吸附动力学模型模型，互动血浆 - Si基底物表面（例如，SiFx物种，X = 0-4）的产物被计算并认为是全球模型的平衡粒子制剂中的第二气体源。我们研究了中性和带电物质密度的依赖性作为气体压力，质量流量，放电功率，基板保持器偏压和基板材料（Si或Si 2）的函数。结果表明，Si蚀刻，Si蚀刻的主产物的密度可以达到SF6特定密度的顺序，确认在这种类型的反应器中实验看实验的高蚀刻速率[3]。对于SiO 2蚀刻观察到相反的事实，其中Si和氧原子之间的强连接限制了Si气相物质的解吸过程。将一些结果与文献的实验结果进行了比较。

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