• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>China Semiconductor Technology International Conference >The plasma diagnosis by optical emission spectroscopy for the study of phosphorus doped nanocrystalline silicone film growth
【24h】

The plasma diagnosis by optical emission spectroscopy for the study of phosphorus doped nanocrystalline silicone film growth

机译：通过发射光谱法进行等离子体诊断，研究磷掺杂的纳米晶硅薄膜的生长

获取原文
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Phosphorus doped nanocrystalline silicon (nc-Si) that deposited on a p-type silicon substrate was prepared by standard radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD). The optical emission spectroscopy (OES) is used as a diagnostic tool for analyzing the processing species and intensity in plasma. The obtained SiH??? spectra are recorded to explain results from the deposition rate of nanocrystalline silicon. The deposition rate increases with increasing power when the electrode distance, working pressure and total flow rate are fixed. Moreover, we also describe ratios of H????? / SiH??? and Si??? / SiH??? to represent the crystallization rate index and electron temperature respectively. Based on OES results, we can utilize plasma spectra as database to monitor film properties. The spectroscopic ellipsometer (SE) and hall measurements were used to further study the growth rate, crystallinity, and electrical property of the films. Under the process conditions of 225??C substrate temperature, 11mW/cm2 power density, 300mTorr working pressure and 30mm electrode distance, the best optimized n-type nc-Si films on a 4cm2 bifacial p-type Cz silicon wafer were obtained.
机译：通过标准射频等离子体增强化学气相沉积（RF-PECVD）制备沉积在p型硅衬底上的磷掺杂纳米晶硅（nc-Si）。光学发射光谱（OES）用作诊断工具，用于分析等离子体中的处理种类和强度。获得的SiH ???记录光谱以解释纳米晶硅沉积速率的结果。当电极距离，工作压力和总流速固定时，沉积速率随功率的增加而增加。此外，我们还描述了H 2的比率。 / SiH ???和斯？？？ / SiH ???分别代表结晶速率指数和电子温度。基于OES结果，我们可以利用等离子体光谱作为数据库来监测薄膜性能。椭圆偏振光谱仪（SE）和霍尔测量仪用于进一步研究薄膜的生长速率，结晶度和电性能。在225℃的基板温度，11mW / cm2的功率密度，300mTorr的工作压力和30mm的电极距离的工艺条件下，获得了在4cm2双面p型Cz硅晶片上最佳优化的n型nc-Si膜。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号