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Solving the challenges of highly outgassing substrates in advanced packaging applications such as UBM and RDL

机译：解决高级包装应用（如UBM和RDL）中高度除气的基材的挑战

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摘要

Organic passivated silicon wafers, composite substrates such as silicon on glass or Fan-out Wafer-Level Package (FOWLP) technology all pose new challenges for UBM and RDL processes [1]-[5]. Materials used in these substrates must be adequately degassed for subsequent plasma processing under vacuum but their heat-sensitive nature necessitates careful thermal management. Selecting the proper technology for each individual step enables the definition of a high yield process, minimizing contamination from the organic materials. This paper discusses the preferred degas principles for different substrates and applications. Temperature simulation data and experimental results are presented for various heating methods including single wafer and batch processes. It illustrates the effectiveness of an atmospheric batch degasser for removal of volatile water and organic compounds (VC) at moderate temperatures below 150??C. The results will be compared with standard vacuum degas technologies and the resulting contact resistance (Rc) values after subsequent low temperature ICP etch will be reported. The paper also addresses the etch process requirements to ensure efficient pumping of remaining volatile contaminants, the required temperature management of the substrates and the particle containment and cleanliness of the process environment.
机译：有机钝化的硅晶片，玻璃上的复合基板如硅或扇出晶片级封装（FOWLP）技术对UBM和RDL工艺进行了新的挑战[1] - [5]。在这些基材中使用的材料必须在真空下充分脱气以进行随后的等离子体加工，但它们的热敏性需要仔细的热管理。为每个单独的步骤选择适当的技术使得能够定义高产过程，最小化来自有机材料的污染。本文讨论了不同底物和应用的首选Degas原理。提供温度仿真数据和实验结果，用于各种加热方法，包括单晶片和批量过程。它说明了大气批量脱气剂在低于150℃的中等温度下除去挥发性水和有机化合物（Vc）的有效性。结果将与标准真空DEGA技术进行比较，并报告后续低温ICP蚀刻后的所得接触电阻（RC）值。本文还解决了蚀刻工艺要求，以确保剩余挥发性污染物的有效泵送，基材所需的温度管理和过程环境的颗粒容错和清洁度。

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