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首页> 外文会议>IEEE Symposium on VLSI Technology >Relationship between hole mobility and current drive enhancement in uniaxially strained thin-body SiGe-on-Insulator pMOSFETs
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Relationship between hole mobility and current drive enhancement in uniaxially strained thin-body SiGe-on-Insulator pMOSFETs

机译：单轴紧张薄体SiGe-on绝缘体PMOSFET中孔迁移率和电流驱动增强的关系

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Hole mobility of uniaxially strained thin-body SiGe-on-Insulator (SGOI) pMOSFETs was directly measured and was compared with that of biaxially strained ones for the first time. The uniaxial stress was induced by lateral strain relaxation in narrow SGOI active areas, which were biaxially strained before isolation. A unique feature of the combination of this global & uniaxial strain in the present technique enabled us to directly measure the mobility. It was found that the hole mobility in the uniaxially strained channels exhibited weaker dependence on effective field than in Si- and biaxially strained channels, resulting in higher mobility in a wide range of effective field over 1 MV/cm. It was demonstrated from the relation between the mobility enhancement and the short-channel I{sub}d enhancement (61% for L=40 nm) that uniaxial compressive strain can provide the significant enhancement in high field or short channel carrier transport as well as the low-field mobility.
机译：直接测量单轴应变薄体SiGe-on-绝缘体（SGoI）PMOSFET的空穴迁移率并将其第一次与双轴应变的PMOS相比。通过在狭窄的SGoI活性区域中的横向应变弛豫诱导单轴应力，在分离之前是双轴应变的。本技术中全球和单轴应变结合的独特特征使我们能够直接测量移动性。结果发现，单轴应变通道中的空穴迁移率表现出比在Si和双轴紧张的通道中的有效区域的较弱依赖性，从而在超过1mV / cm的宽范围的有效场中产生更高的迁移率。从迁移率增强和短通道I {Sub} D增强（L = 40 nm的61％）的关系中证明了它，即单轴压缩应变可以提供高场或短沟道载波运输中的显着增强低场移动性。

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