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首页> 外文会议> >PATTERNING OF ALUMINUM NITRIDE FILMS WITH SiO_2 HARD MASK IN AN MERIE DIODE REACTOR
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PATTERNING OF ALUMINUM NITRIDE FILMS WITH SiO_2 HARD MASK IN AN MERIE DIODE REACTOR

机译：SiO_2硬膜在梅里二极管反应器中氮化铝膜的图案化。

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摘要

The etching characteristics of thin aluminum nitride films in a standard MERIE diode reactor were investigated. Using chlorine based etch chemistries, the requirements regarding profile control, etch uniformity, and selectivity to SiO_2 used as both hard mask and underlayer were met. The etch rates for aluminum nitride in Cl_2, HCl, and BCl_3 only plasmas were found to scale inversely with the binding energy of the chlorine atom in these molecules. The etch rates obtained with Cl_2 only plasmas are among the highest reported in the literature. During aluminum nitride etching the selectivities to the SiO_2 hard mask were found to be twice as high as during the overetch when aluminum nitride has cleared. The selectivity is due to a reduction of the erosion rates for the hard mask by 50%. An investigation of the hard mask with AES revealed that these lower mask erosion rates result from a redeposition of aluminum onto the hard mask which occurs as long as aluminum nitride is not etched to end.
机译：研究了标准MERIE二极管反应器中氮化铝薄膜的刻蚀特性。使用基于氯的蚀刻化学，可以满足有关轮廓控制，蚀刻均匀性以及对用作硬掩模和底层的SiO_2的选择性的要求。发现仅Cl_2，HCl和BCl_3等离子体中氮化铝的蚀刻速率与这些分子中氯原子的结合能成反比。仅用Cl_2等离子体获得的蚀刻速率是文献中报道的最高蚀刻速率之一。在氮化铝蚀刻期间，发现对SiO_2硬掩模的选择性是氮化铝已经清除时在过蚀刻期间的两倍。选择性是由于硬掩模的腐蚀速率降低了50％。对使用AES的硬掩模进行的研究表明，这些较低的掩模腐蚀速率是由于铝重新沉积到硬掩模上而引起的，只要不将氮化铝蚀刻到终点即可。

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