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首页> 外文会议>North American Power Symposium >A comparative design and performance study of a non-isolated DC-DC buck converter based on Si-MOSFET/Si-Diode, SiC-JFET/SiC-schottky diode, and GaN-transistor/SiC-Schottky diode power devices
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A comparative design and performance study of a non-isolated DC-DC buck converter based on Si-MOSFET/Si-Diode, SiC-JFET/SiC-schottky diode, and GaN-transistor/SiC-Schottky diode power devices

机译：基于Si-MOSFET / Si二极管，SiC-JFET / SiC肖特基二极管和GaN晶体管/ SiC-肖特基二极管功率器件的非隔离式DC-DC降压转换器的对比设计和性能研究

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Conventional silicon (Si) based power devices are commonly used in industrial battery charging applications. In most cases, fast switching operation is desired in such applications in order to have a compact power converter system in terms of size and weight, while in contrast, it drives for large switching losses. The maturity of wide bandgap (WBG) technology provides enormous opportunities to ameliorate fast switching capabilities, high blocking voltage abilities, and high temperature operating conditions for power devices. This paper presents a comparative design and performance study of a non-isolated dc-dc buck converter based on three combinations of power devices: Si-MOSFET/Si-diode, SiC-JFET/SiC-Schottky diode, and GaN-transistor/SiC-Schottky diode for industrial applications. Characterization of the switching behavior of each power device and evaluation of switching energy losses are presented and discussed. Furthermore, the overall converter efficiency at high switching operations as well as with a wide operating range of input voltages, and the converter power density to size ratio are studied and reported. Results are shown that the GaN-transistor/SiC-Schottky diode and SiC-JFET/SiC-Schottky diode based converters exhibit significant lower switching energy losses and less total converter power loss, and thus a more efficient performance compared to the Si-MOSFET/Si-diode based converter. Through the analysis performed, it is shown that the hybrid combination of the GaN-transistor/SiC-Schottky diode followed by the SiC-JFET/SiC-Schottky diode combination are the most robust options for a high performance, high power density with smaller size non-isolated dc-dc buck converter for harsh operating conditions.
机译：常规的基于硅（Si）的功率器件通常用于工业电池充电应用中。在大多数情况下，为了在尺寸和重量上具有紧凑的功率转换器系统，在此类应用中需要快速开关操作，而与此相反，它会驱动较大的开关损耗。宽带隙（WBG）技术的成熟为改善功率器件的快速开关能力，高阻断电压能力和高温工作条件提供了巨大的机会。本文介绍了基于三种功率器件组合的非隔离式DC-DC降压转换器的对比设计和性能研究：Si-MOSFET / Si二极管，SiC-JFET / SiC-肖特基二极管和GaN-晶体管/ SiC -工业应用的肖特基二极管。提出并讨论了每个功率器件的开关特性的表征以及开关能量损耗的评估。此外，研究并报告了高开关操作以及宽输入电压工作范围下的整体转换器效率，以及转换器功率密度与尺寸之比。结果表明，基于GaN晶体管/ SiC-肖特基二极管和SiC-JFET / SiC-肖特基二极管的转换器显示出更低的开关能量损耗和更少的总转换器功率损耗，因此与Si-MOSFET /相比具有更高的性能。基于Si二极管的转换器。通过执行的分析表明，GaN-晶体管/ SiC-肖特基二极管的混合组合，然后是SiC-JFET / SiC-肖特基二极管的组合，是高性能，高功率密度和小尺寸的最可靠的选择。非隔离式DC-DC降压转换器，用于苛刻的工作条件。

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