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Micro-Transformer-Based Integrated Digital Isolator in 180/90 nm CMOS

机译：180/90 nm CMOS中基于微变压器的集成数字隔离器

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摘要

An integrated circuit of a digital isolator comprising a transceiver chip implemented in standard 180 nm CMOS process as well as micro-transformers implemented in a special 90 nm technology is presented. The coreless transformer placed on a separate chip has a stacked structure with two adjacent planar copper windings in two layers separated by a silicon dioxide insulator. The transceiver utilizes a pulse edges encoding technique for transmitting signals through the insulation barrier. The proposed digital isolator has a feature in the topology of the elements, which ensures tolerance to the effects of ionizing radiation, as well as the small size of transformers, which makes it possible to create multichannel integrated circuits in small-sized packages. The tested prototype of the digital isolator provided a data transfer rate of more than 30 Mbps. As much as 2.5 kV isolation voltage is achieved between the coils of transformer.
机译：提出了一种数字隔离器的集成电路，该集成电路包括以标准180 nm CMOS工艺实现的收发器芯片以及以特殊90 nm技术实现的微变压器。放置在单独芯片上的无芯变压器具有堆叠结构，该堆叠结构具有由二氧化硅绝缘体隔开的两层中的两个相邻的平面铜绕组。收发器利用脉冲边沿编码技术通过绝缘屏障传输信号。所提出的数字隔离器在元件的拓扑结构中具有一个特征，该特征确保了对电离辐射的影响的容忍度以及变压器的小尺寸，这使得有可能在小尺寸封装中创建多通道集成电路。经过测试的数字隔离器原型提供了超过30 Mbps的数据传输速率。变压器线圈之间可实现高达2.5 kV的隔离电压。

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