首页> 外文会议>Chinese Automation Congress >Research on Resistance to Damage Effect of Low Dose Rate Ionizing Irradiation of Bipolar Transistors
【24h】

Research on Resistance to Damage Effect of Low Dose Rate Ionizing Irradiation of Bipolar Transistors

机译:双极晶体管低剂量率电离辐射的抗损伤作用研究

获取原文

摘要

This paper analyzes the effect of the enhancement effect of low dose rate irradiation of bipolar devices on the reliability of current products. Combined with the existing manufacturing process of bipolar devices, based on the existing bipolar PNP process, the concentration in the emission area is improved. The layout of the emission area with less ratio of perimeter to area is adopted. It is a process strengthening technology which can effectively enhance the resistance to ionization irradiation of silicon PNP bipolar transistors.
机译:本文分析了低剂量率双极型设备的辐射增强效应对当前产品可靠性的影响。结合现有的双极型器件制造工艺,在现有的双极型PNP工艺的基础上,提高了发射区的浓度。发射区域的布局采用周长与面积之比较小的方式。这是一种工艺增强技术,可以有效地增强硅PNP双极晶体管的抗电离辐射能力。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号