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首页> 外文会议>IEEE International Memory Workshop >Review and Outlook on Embedded NVM Technologies – From Evolution to Revolution
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Review and Outlook on Embedded NVM Technologies – From Evolution to Revolution

机译：嵌入式NVM技术的回顾与展望-从演进到革命

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摘要

Embedded non-volatile memory (NVM) technologies are key enablers of today’s wide variety of microcontroller (MCU) products. Since more than three decades floating gate and oxideitride charge storage based NVM concepts embedded into CMOS technologies are dominating the market and successfully allowed evolutionary chip performance, leakage, memory size and cost improvements while following the CMOS shrink roadmap. Although today we see advanced CMOS nodes getting shrunk down to 5nm and below, it is getting more and more complex and expensive to embed such classical NVM concepts into advanced CMOS nodes. Therefore since many years both academia and industry are strongly focusing on emerging NVM concepts like STT-MRAM, PCM, RRAM and others, allowing easier CMOS integration and lower process complexity, hoping that eventually an emerging successor NVM concept can cover the wide range of MCU application requirements. Although these concepts use fundamentally different physical working principles, today several of these new concepts are at the verge of being introduced to the market replacing traditional NVM concepts. This paper gives an overview on the current situation and application specific outlook.
机译：嵌入式非易失性存储器（NVM）技术是当今各种微控制器（MCU）产品的关键推动力。三十多年来，嵌入到CMOS技术中的基于浮栅和氧化物/氮化物电荷存储的NVM概念一直占据着市场主导地位，并在遵循CMOS缩小路线图的同时，成功地实现了芯片性能，泄漏，存储器大小和成本方面的改进。尽管今天我们看到先进的CMOS节点缩小到5nm及以下，但将这种经典的NVM概念嵌入到先进的CMOS节点中却变得越来越复杂和昂贵。因此，由于多年来学术界和工业界都将注意力集中在新兴的NVM概念上，例如STT-MRAM，PCM，RRAM等，从而使CMOS集成更容易并且工艺复杂性更低，希望新兴的后继NVM概念最终可以覆盖广泛的MCU。应用要求。尽管这些概念使用的物理工作原理是根本不同的，但如今，其中一些新概念正处于替代传统NVM概念进入市场的边缘。本文概述了当前的情况和特定于应用程序的前景。

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