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首页> 外文会议>IEEE Energy Conversion Congress and Exposition >A Novel In Situ IGBT and FWD Junction Temperature Estimation Technique for IGBT Module Based on On-State Voltage Drop Measurement
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A Novel In Situ IGBT and FWD Junction Temperature Estimation Technique for IGBT Module Based on On-State Voltage Drop Measurement

机译：基于导通压降测量的IGBT模块原位IGBT和FWD结温度估计新技术

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摘要

Thermal monitoring is crucial for the protection and control of power electronics devices. On-state voltage drop is the most popular parameter for junction temperature estimation. However, there is still a lack of compositive junction temperature estimation technique with a fast response for the insulated gate bipolar transistor (IGBT) module, including a freewheeling diode (FWD). A novel in situ IGBT and FWD junction temperature estimation technique for IGBT module based on IGBT and FWD on-state voltage drop measurement is proposed in this paper. The proposed method can measure the on-state voltage drops of IGBT and FWD on-line with high accuracy. With in situ acquirement of the on-state voltage drops of IGBT and FWD and utilizing the linear relationship between IGBT and FWD junction temperatures and their on-state voltage drops, the IGBT module junction temperatures can be estimated. The simulation and experimental results validate the feasibility and performance of the proposed on-state voltage drop measuring approach under various IGBT module operating cases. The proposed technique has characteristics of high response speed, non-invasiveness for normal converter operating, and simple structure.
机译：热监控对于电力电子设备的保护和控制至关重要。导通电压降是结温估计的最常用参数。但是，对于包括续流二极管（FWD）的绝缘栅双极晶体管（IGBT）模块，仍缺乏具有快速响应的集成结温度估算技术。提出了一种基于IGBT和FWD通态压降测量的IGBT模块原位IGBT和FWD结温度估算技术。所提出的方法可以高精度地在线测量IGBT和FWD的导通状态压降。通过现场获取IGBT和FWD的导通电压降，并利用IGBT和FWD结温及其导通电压降之间的线性关系，可以估算IGBT模块的结温。仿真和实验结果验证了所提出的导通状态压降测量方法在各种IGBT模块工作情况下的可行性和性能。所提出的技术具有响应速度快，转换器正常运行的无创性和结构简单的特点。

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