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首页> 外文会议>Electronic Components and Technology Conference, 1995. Proceedings., 45th >A new bonding mechanism of 50 μm pitch TAB-ILB with 0.25 μmSn plated Cu lead
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A new bonding mechanism of 50 μm pitch TAB-ILB with 0.25 μmSn plated Cu lead

机译：间距为0.25μm的间距为50μm的TAB-ILB的新结合机理镀锡铜铅

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摘要

A 50 μm pitch TAB has been developed by applying newlydeveloped TAB tape and inner lead bonding technology. A newelectrodeposited Cu foil which has a high tensile strength and 18 μmthickness was adopted as the lead material. Sn plating on the innerleads has been thinned to 0.25 μm from the conventional 0.6 μm toavoid excess alloy formation. The inner leads were gang-bonded to the Aubumps. The cross sections of the bonded region were observed by SEM andEPMA for the specimens before and after high temperature storage (HTS),The Au-Sn fillets formed by the bonding supported the inner leads at theinitial state. Ternary Au-Cu-Sn alloy was also formed at the interfacebetween the inner lead and the bump. After HTS, cracks formed betweenthe fillet and the inner lead, and the fillets could not contribute tosupporting the inner lead. The ternary Au-Cu-Sn alloy which was formedat the bottom of the inner lead in ILB processes transformed to binaryCu-Au alloys after HTS. Sn was driven away from the lead-bump interface.The binary Cu-Au alloys kept the bonding strength after HTS. Adestructive lead pull test was performed before and after HTS. Thefailure mode was a lead fracture in all cases
机译：通过新应用开发了间距为50μm的TAB 开发了TAB胶带和内部铅焊技术。一个新的 高抗拉强度和18μm的电沉积铜箔 厚度用作引线材料。内部镀锡 引线已从传统的0.6μm细化到0.25μm 避免形成过多的合金。内部引线与Au结成团 颠簸。用SEM和SEM观察结合区域的横截面。 EPMA用于高温储存（HTS）之前和之后的样品， 通过键合形成的Au-Sn圆角将内部引线支撑在 初始状态。在界面处也形成了三元Au-Cu-Sn合金 在内引线和凸点之间。高温超导后，裂纹之间形成 圆角和内部引线，圆角不会对 支撑内部引线。形成的三元Au-Cu-Sn合金 在ILB流程中内部引线的底部转换为二进制 HTS之后的Cu-Au合金。 Sn被驱离了铅凸点接口。 HTS后，二元Cu-Au合金保持了粘结强度。一种 在HTS之前和之后进行破坏性的牵拉试验。这 在所有情况下，故障模式均为铅断裂

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