Characterization of 6H-SiC JFETs for use in a temperature monitoroperating from 25° C to 350° C

机译：用于温度监控器的6H-SiC JFET的特性在25°C至350°C的温度下运行

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6H-SiC buried-gate n-channel depletion-mode Junction Field-Effect Transistors (JFETs) manufactured by Cree Research, Inc. were characterized from 25 to 350° C in terms of transconductance (g_m), pinchoff voltage (V_p), output resistance (r₀), input resistance (R_in), drain-to-source current at zero gate-to-source voltage (I_DSS), gate-to-source reverse biased leakage current (I_GSS), off-state drain-to-source current (I_DSS(off)), and noise power spectral density (S_V). Degradation of the small-signal voltage gain (to ~1 at 350° C) as a result of increasing output resistance, was found to be the most serious device shortcoming. The 6H-SiC JFETs were tested for use in a temperature monitoring circuit (from 25 to 350° C) currently under development at Auburn University for use in automotive and other industrial applications. A SPICE model was developed to match the experimental data obtained from the 6H-SiC JFETs and diode. The SPICE simulation of the temperature monitoring circuit's output voltage corresponded well with measured data as a function of temperature. Maximum temperature percent error was 2.4% over the temperature range of 25 to 350° C

机译：由Cree Research，Inc.生产的6H-SiC埋栅n沟道耗尽型结型场效应晶体管（JFET）的跨导特性（g _{m ）的特征是在25至350°C的温度范围内，夹断电压（V _{p ），输出电阻（r _{0 ），输入电阻（R _{in ），漏极到源极电流为零栅极到源极电压（I _{DSS ），栅极到源极反向偏置泄漏电流（I _{GSS ），截止状态的漏极到源极电流（ I _{DSS（off ））和噪声功率谱密度（S _{V ）。由于增加的输出电阻，小信号电压增益的下降（在350°C时约为1）是最严重的器件缺点。 6H-SiC JFET已测试用于奥本大学目前在汽车和其他工业应用中使用的温度监控电路（25至350°C）中的使用。开发了SPICE模型以匹配从6H-SiC JFET和二极管获得的实验数据。温度监控电路输出电压的SPICE仿真与作为温度函数的实测数据非常吻合。在25至350°C的温度范围内，最大温度百分比误差为2.4％}}}}}}}}

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《Electronic Components and Technology Conference, 1995. Proceedings., 45th》||p.255-260|共6页
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Casady J.B.; Johnson R.W.; Dillard W.C.;
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4. Characterization of 6H-SiC JFETs for use in a temperature monitor operating from 25/spl deg/C to 350/spl deg/C [C] . Casady, J.B., Johnson, Electronic Components and Technology Conference, 1995. Proceedings., 45th . 1995

机译：用于在25 / spl deg / C至350 / spl deg / C的温度监控器中使用的6H-SiC JFET的特性
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Characterization of 6H-SiC JFETs for use in a temperature monitoroperating from 25° C to 350° C

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