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An over 120 dB wide-dynamic-range 3.0 μm pixel image sensor with in-pixel capacitor of 41.7 fF/um2 and high reliability enabled by BEOL 3D capacitor process

机译：超过120 dB的宽动态范围3.0μm像素图像传感器，像素电容为41.7 fF / um 2 ，并且通过BEOL 3D电容器工艺实现了高可靠性

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We realized a simultaneous-capture wide-dynamic-range image sensor with 3.0 μm pixels using novel in-pixel 3D capacitors located in BEOL. We achieved high capacitance density of 41.7 fF/μm^{2 and low leakage current density of 3.6×10^{-10 A/cm^{2 at 1 V by applying 3D structure and optimizing dielectric deposition process. TDDB investigations showed that estimated failure time at 125°C is more than 10 years. We demonstrated over 120 dB dynamic range image sensor with 3.0 μm pixels, which is enabled by this BEOL 3D capacitor process technology. (Keywords: image sensor, capacitor, 3D, BEOL, high reliability and wide dynamic range).}}}

机译：我们使用位于BEOL的新型像素内3D电容器实现了同时捕获宽动态范围图像传感器（3.0μm像素）。我们实现了41.7 fF /μm的高电容密度 ^{2
低漏电流密度为3.6×10
^{-10
A /厘米
^{2
通过应用3D结构和优化电介质沉积工艺，在1 V下工作。 TDDB调查显示，估计在125°C下的故障时间超过10年。我们演示了通过这种BEOL 3D电容器工艺技术实现的，具有3.0μm像素的超过120 dB的动态范围图像传感器。（关键字：图像传感器，电容器，3D，BEOL，高可靠性和宽动态范围）。}}}

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《IEEE Symposium on VLSI Technology》|2018年|71-72|共2页
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作者
M. Takase; S. Isono; Y. Tomekawa; T. Koyanagi; T. Tokuhara; M. Harada; Y. Inoue;
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关键词
Capacitors; Three-dimensional displays; Image sensors; Capacitance; Leakage currents; Hafnium compounds; Reliability;

机译：电容器;三维显示器;图像传感器;电容;漏电流; H化合物;可靠性;

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专利

1. A Low-Noise CMOS THz Imager Based on Source Modulation and an In-Pixel High-Q Passive Switched-Capacitor N-Path Filter [J] . Assim Boukhayma, Antoine Dupret, Jean-Pierre Rostaing, Sensors . 2016,第3期

机译：基于源调制和像素内高Q无源开关电容N路径滤波器的低噪声CMOS THz成像器
2. A 151 dB High Dynamic Range CMOS Image Sensor Chip Architecture With Tone Mapping Compression Embedded In-Pixel [J] . Vargas-Sierra S., Linan-Cembrano G., Rodriguez-Vazquez A. Sensors Journal, IEEE . 2015,第1期

机译：具有音调映射压缩嵌入式像素的151 dB高动态范围CMOS图像传感器芯片架构
3. Post-processing and performance analysis of BEOL integrated MEMS pressure sensor capacitors in 8-metal 130 nm CMOS [J] . Ananiah Durai Sundararajan, S.M. Rezaul Hasan Microelectronic Engineering . 2014,第may期

机译：在8金属130 nm CMOS中的BEOL集成MEMS压力传感器电容器的后处理和性能分析
4. An over 120 dB wide-dynamic-range 3.0 μm pixel image sensor with in-pixel capacitor of 41.7 fF/um2 and high reliability enabled by BEOL 3D capacitor process [C] . M. Takase, S. Isono, Y. Tomekawa, IEEE Symposium on VLSI Technology . 2018

机译：具有41.7FF / UM ^{2 的带内电容器的超过120 dB的宽动态范围3.0μm像素图像传感器，并通过BEOL 3D电容过程实现了高可靠性}
5. A Low-Noise CMOS THz Imager Based on Source Modulation and an In-Pixel High-Q Passive Switched-Capacitor N-Path Filter [O] . Assim Boukhayma, Antoine Dupret, Jean-Pierre Rostaing, 2016

机译：基于源调制和像素内高Q无源开关电容N路径滤波器的低噪声CMOS THz成像器
6. A Low-Noise CMOS THz Imager Based on Source Modulation and an In-Pixel High-Q Passive Switched-Capacitor N-Path Filter [O] . Assim Boukhayma, Antoine Dupret, Jean-Pierre Rostaing, 2016

机译：基于源调制的低噪声CmOs THz成像器和像素内高Q无源开关电容N路径滤波器

An over 120 dB wide-dynamic-range 3.0 μm pixel image sensor with in-pixel capacitor of 41.7 fF/um2 and high reliability enabled by BEOL 3D capacitor process

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