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Low Thermal Budget Amorphous Indium Tungsten Oxide Nano-Sheet Junctionless Transistors with Near Ideal Subthreshold Swing

机译：具有接近理想亚阈值摆幅的低热预算非晶氧化铟锡纳米片无结晶体管

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Amorphous indium tungsten oxide (a-IWO) nano-sheet (NS) junctionless (JL) transistors (a-IWO NS-JLTs) have been successfully fabricated and demonstrated in the category of indium oxide based thin film transistors (TFTs). We have scaled down thickness of a-IWO channel to 4nm. The proposed a-IWO NS-JLTs with low operation voltages exhibit good electrical characteristics: near ideal peak subthreshold swing (S.S.) ~ 63mV/dec., high field-effect mobility (μ_FE) ~ 25.3 cm^{2/V-s. The novel a-IWO NS-JLTs with low temperature processes are promising candidates for monolithic three-dimensional integrated circuits (3-D ICs), vertical stacked (VS) hybrid CMOS technology, and large-scale integration (LSI) applications in the future.}

机译：非晶铟氧化钨（a-IWO）纳米片（NS）无结（JL）晶体管（a-IWO NS-JLTs）已成功制造，并在基于氧化铟的薄膜晶体管（TFT）类别中得到了证明。我们已经将a-IWO通道的厚度缩减至4nm。拟议的低工作电压a-IWO NS-JLT具有良好的电气特性：接近理想峰值亚阈值摆幅（S.S.）〜63mV / dec。，高场效应迁移率（μ _{FE
）〜25.3厘米
^{2
/ V-s。具有低温工艺的新型a-IWO NS-JLT有望成为单片三维集成电路（3-D IC），垂直堆叠（VS）混合CMOS技术以及未来大规模集成（LSI）应用的候选产品。}}

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《IEEE Symposium on VLSI Technology》|2018年|21-22|共2页
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Po-Yi Kuo; Chien-Min Chang; Po-Tsun Liu;
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Hafnium compounds; Voltage measurement; Capacitors; Logic gates; Iron; Thickness measurement; Hysteresis;

机译：compounds化合物;电压测量;电容器;逻辑门;铁;厚度测量;磁滞;

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专利

1. Two-Dimensional-Like Amorphous Indium Tungsten Oxide Nano-Sheet Junctionless Transistors with Low Operation Voltage [J] . Po-Yi Kuo, Chien-Min Chang, I-Han Liu, Scientific reports. . 2019,第1期

机译：二维类似的无定形铟氧化物氧化物纳米纸张连接晶体管，具有低操作电压
2. Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO2 Gate Dielectric and Excellent Uniformity [J] . Samanta Subhranu, Chand Umesh, Xu Shengqiang, IEEE Electron Device Letters . 2020,第6期

机译：低亚阈值摆动和高迁移率无定形铟 - 氧化锌薄膜晶体管，具有薄的HFO2栅极电介质和优异的均匀性
3. Influence of H_2O dipole on subthreshold swing of amorphous indium-gallium-zinc-oxide thin film transistors [J] . Chung W.-F., Chang T.-C., Li H.-W., Electrochemical and solid-state letters . 2011,第3期

机译：H_2O偶极子对非晶铟镓锌氧化物薄膜晶体管亚阈值摆幅的影响
4. Low Thermal Budget Amorphous Indium Tungsten Oxide Nano-Sheet Junctionless Transistors with Near Ideal Subthreshold Swing [C] . Po-Yi Kuo, Chien-Min Chang, Po-Tsun Liu IEEE Symposium on VLSI Technology . 2018

机译：低热预算无定形铟钨氧化物纳米片状连接晶体管，附近理想的亚阈值摆动
5. On the Reversible Effects of Bias-Stress Applied to Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors [D] . Bharadwaj, Anish Suresh. 2018

机译：关于偏压应力施加对非晶铟 - 镓 - 锌 - 氧化锌薄膜晶体管的可逆效应
6. Two-Dimensional-Like Amorphous Indium Tungsten Oxide Nano-Sheet Junctionless Transistors with Low Operation Voltage [O] . Po-Yi Kuo, Chien-Min Chang, I-Han Liu, -1

机译：低工作电压的二维非晶态氧化铟锡纳米片无结晶体管
7. All‐Oxide Transparent Thin‐Film Transistors Based on Amorphous Zinc Tin Oxide Fabricated at Room Temperature: Approaching the Thermodynamic Limit of the Subthreshold Swing [O] . Oliver Lahr, Michael S. Bar, Holger Wenckstern, 2020

机译：基于室温制造的无晶硅锌氧化物的全氧化物透明薄膜晶体管：接近亚阈值摆动的热力学极限

Low Thermal Budget Amorphous Indium Tungsten Oxide Nano-Sheet Junctionless Transistors with Near Ideal Subthreshold Swing

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