body), s'/> Significant Performance Enhancement of UTB GeOI pMOSFETs by Advanced Channel Formation Technologies
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Significant Performance Enhancement of UTB GeOI pMOSFETs by Advanced Channel Formation Technologies

机译：先进的沟道形成技术显着提高了UTB GeOI pMOSFET的性能

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Advanced channel formation technologies, such as precise control of GeOI body thickness (Tbody), surface roughness and interfacial quality, utilizing Si-passivation/Ge-channel/SiGe hetero-epitaxy and Ge digital etching (DE) techniques were implemented for UTB GeOI structure. Si passivation for Ge/BOX interface has been verified to suppress Coulomb scattering owing to better interfacial quality. Insertion of SiGe etching stop (ES) layer and dozens DE (DDE) were found to be quite effective to reduce Tbody fluctuation as well as surface roughness, resulting in the significant improvement of mobility. As a result, we have demonstrated record high hole mobility of ~200 cm2/Vs in UTB GeOI pMOSFETs without the strain technology, which outperforms Si universal mobility by 2 times even under Tbody of 9 nm.
机译：先进的通道形成技术，例如GeOI体厚度（T的精确控制） 正文 ），表面粗糙度和界面质量，利用硅钝化/ Ge沟道/ SiGe异质外延和Ge数字蚀刻（DE）技术实现了UTB GeOI结构。由于界面质量更好，Ge / BOX界面的Si钝化已被证明可抑制库仑散射。发现插入SiGe蚀刻停止层（ES）和数十个DE（DDE）可以非常有效地降低T 正文 波动以及表面粗糙度，导致迁移率显着提高。结果，我们证明了约200 cm的高空穴迁移率 2 不使用应变技术的UTB GeOI pMOSFET的/ Vs，即使在T下也比Si通用迁移率高2倍 正文 9 nm。

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