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Ultrahigh-Sensitive and CMOS Compatible ISFET Developed in BEOL of Industrial UTBB FDSOI

机译：在工业UTBB FDSOI的BEOL中开发的超高灵敏度和CMOS兼容ISFET

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The industrialization of ion-sensitive field-effect transistors (ISFETs) has been constrained due mainly to the limited sensitivity, and inclusion of bulky reference electrode. With this paper, we report an ultrahigh-sensitive and CMOS compatible ISFET in which the need for the reference electrode is eliminated. Based on an industrial UTBB FDSOI device in BEOL, we obtained an ultrahigh sensitivity of 730 mV/pH which is 12-times higher than the Nernst limit. Integrating the sensing area and the control gate in the BEOL of UTBB FDSOI transistors with a capacitive divider circuit, and using the back biasing feature of such devices, we could eliminate the necessity of the reference electrode making our sensor highly scalable and ideal for the IoT. This is the first demonstration of an integrated pH sensor in the BEOL of FDSOI platform. The measurements on fabricated sensors have also been validated by modeling and simulation.
机译：离子敏感型场效应晶体管（ISFET）的工业化已经受到限制，这主要是由于其灵敏度有限，并且包含了体积庞大的参比电极。在本文中，我们报告了一种超高灵敏度和CMOS兼容的ISFET，其中消除了对参比电极的需求。基于BEOL的工业UTBB FDSOI设备，我们获得了730 mV / pH的超高灵敏度，比能斯特极限高12倍。将UTBB FDSOI晶体管的BEOL中的感应区域和控制栅极与电容分压器电路集成在一起，并使用此类器件的反向偏置功能，我们可以消除参考电极的必要性，从而使我们的传感器具有高度可扩展性，非常适合物联网。这是FDSOI平台的BEOL中集成pH传感器的首次展示。装配式传感器的测量结果也已通过建模和仿真验证。

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