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首页> 外文会议>IEEE Symposium on VLSI Technology >Dependence of Reliability of Ferroelectric HfZrOx on Epitaxial SiGe Film with Various Ge Content
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Dependence of Reliability of Ferroelectric HfZrOx on Epitaxial SiGe Film with Various Ge Content

机译：铁电体HfZrO x 的可靠性对不同Ge含量的外延SiGe薄膜的影响

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TiN/ferroelectric-HfZrOx (HZO)/epi-SiGe (MFS) structure was employed as the platform to investigate the dependence of Ge content on reliability performance and the mechanism behind it. As compared to Si counterpart, HZO on Si0.56Ge0.44 exhibits not only enhanced remnant polarization (Pr) by 58 % but much improved reliability in terms of negligible Pr degradation up to 109 cycles under ±4 V/100k Hz bipolar AC stress, desirable retention at pristine and cycled state up to 104 sec, and smaller imprint effect against time at 85 °C. The Ge content-dependent reliability performance is mainly due to the thinner sub-oxide interfacial layer (IL) with better quality since it is too thin to trap charges while less vulnerable to defect generation due to stronger bonding (fewer Vo). IL with higher κ value is also helpful to suppress E-field across it, beneficial to enhance reliability. The results suggest that as the technology advances into SiGe platform, it is more viable for MFS-based memory as the reliability issues for Si will be greatly mitigated.
机译：TiN /铁电-HfZrO x （HZO）/ epi-SiGe（MFS）结构被用作研究Ge含量对可靠性性能的依赖性及其背后机理的平台。与Si对应物相比，HZO on Si 0.56 通用电器 0.44 不仅表现出增强的剩余极化（P r ）降低了58％，但P值可忽略不计，可靠性大大提高 r 降解高达10 9 在±4 V / 100k Hz双极AC应力下可循环，在原始状态和循环状态下可保持理想状态，最高可达10 4 秒，并且在85°C下随时间变化的压印效果更小。 Ge含量依赖的可靠性性能主要归因于质量更好的亚氧化物界面层（IL）的厚度较薄，因为它太薄而不能捕获电荷，而由于键合力强（较少的Vo），较不易产生缺陷。 κ值较高的IL还有助于抑制其上的电场，有利于提高可靠性。结果表明，随着技术向SiGe平台的发展，基于MFS的内存将更加可行，因为将大大缓解Si的可靠性问题。

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